TLE2064AM

現行

軍用級、四路、36-V、2-MHz、輸入至 V+、1.5-mV 偏移電壓、JFET 輸入運算放大器

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LM124M 現行 操作溫度範圍為 -55°C 至 125°C 的軍用級、四路、30-V、1.2-MHz 運算放大器 High GBW (1.2 MHz), low power (0.175 mA), low noise (35 nV/√Hz), high output current (40 mA)

產品詳細資料

Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.4 Vos (offset voltage at 25°C) (max) (mV) 4 Iq per channel (typ) (mA) 0.312 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 6 Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.045 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 1.3 Output swing headroom (to positive supply) (typ) (V) -1.3
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.4 Vos (offset voltage at 25°C) (max) (mV) 4 Iq per channel (typ) (mA) 0.312 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 6 Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.045 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 1.3 Output swing headroom (to positive supply) (typ) (V) -1.3
CFP (W) 14 58.023 mm² (— mm × — mm) LCCC (FK) 20 79.0321 mm² (— mm × — mm) CDIP (J) 14 130.4652 mm² (— mm × — mm)
  • Wide bandwidth: 1.1MHz GBW
  • Low supply current: 120µA/Ch (typical)
  • High output drive, specified into 100Ω loads
  • Lower noise floor than earlier generations of low-power BiFET
  • Wide bandwidth: 1.1MHz GBW
  • Low supply current: 120µA/Ch (typical)
  • High output drive, specified into 100Ω loads
  • Lower noise floor than earlier generations of low-power BiFET

The TLE206x is a family of high voltage (36V) FET-Input operational amplifiers. These devices offer good DC precision and AC performance. This includes low noise floor and high slew rate, making TLE206x family a flexible, general-performance amplifier. TLE206x are available in standard packages PDIP and SOIC.

The TLE206xM, TLE206xAM, TLE206xBM devices use the original design with JFET-input transistors and On-chip Zener trimming of offset voltage. The TLE206xM, TLE206xAM, TLE206xBM are available in CDIP, LCCC and CFP package.

The TLE206x is a family of high voltage (36V) FET-Input operational amplifiers. These devices offer good DC precision and AC performance. This includes low noise floor and high slew rate, making TLE206x family a flexible, general-performance amplifier. TLE206x are available in standard packages PDIP and SOIC.

The TLE206xM, TLE206xAM, TLE206xBM devices use the original design with JFET-input transistors and On-chip Zener trimming of offset voltage. The TLE206xM, TLE206xAM, TLE206xBM are available in CDIP, LCCC and CFP package.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TLE206x,TLE206xA, TLE206xB FET-Input High-Output-Drive μPower Operational Amplifiers datasheet (Rev. D) PDF | HTML 2026/3/4
* SMD TLE2064AM SMD 5962-90809 2016/6/21

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