計算工具
TPS3700
- Wide supply voltage range: 1.8 V to 18 V
- Adjustable threshold: down to 400 mV
- High threshold accuracy:
- 1.0% over temperature
- 0.25% (Typical)
- Low quiescent current: 5.5 µA (Typical)
- Open-drain outputs for overvoltage and undervoltage detection
- Internal hysteresis: 5.5 mV (Typ)
- Temperature range: –40°C to 125°C
- Packages:
- SOT-6
- 1.5-mm × 1.5-mm WSON-6
The TPS3700 wide-supply window voltage detector operates over a 1.8-V to 18-V range. The device has two high-accuracy comparators with an internal 400-mV reference and two open-drain outputs rated to 18 V for over- and undervoltage detection. The TPS3700 can be used as a window voltage detector or as two independent voltage monitors; the monitored voltage can be set with the use of external resistors.
OUTA is driven low when the voltage at INA+ drops below (VITP – VHYS), and goes high when the voltage returns above the respective threshold (VITP). OUTB is driven low when the voltage at INB– rises above VITP, and goes high when the voltage drops below the respective threshold (VITP – VHYS). Both comparators in the TPS3700 include built-in hysteresis for filtering to reject brief glitches, thereby ensuring stable output operation without false triggering.
The TPS3700 is available in a SOT-6 and a 1.5-mm × 1.5-mm WSON-6 package and is specified over the junction temperature range of –40°C to 125°C.
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開發板
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開發板
TPS3700EVM-114 — 適用於 SOT-23 封裝的 TPS3700 高電壓 (18-V) 窗型電壓偵測器評估模組
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使用指南: PDF
開發板
TPS3700EVM-202 — 適用於 WSON 封裝的 TPS3700 高電壓 (18-V) 窗型電壓偵測器評估模組
The Texas Instruments TPS3700EVM-202 evaluation module (EVM) helps you evaluate the operation and performance of the TPS3700 high-voltage window comparator. The EVM has an overvoltage and undervoltage supervisory circuit with a wide supply range, independent open-drain outputs, very-low (...)
使用指南: PDF
開發板
UCC21732QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板
The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
使用指南: PDF
開發板
UCC21750QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板
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使用指南: PDF
模擬型號
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SBVM242A.TSC (123 KB) - TINA-TI Reference Design
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| 封裝 | 引腳 | 下載 |
|---|---|---|
| SOT-23-THN (DDC) | 6 | 檢視選項 |
| WSON (DSE) | 6 | 檢視選項 |
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