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TRF0206-SP

現行

Radiation-hardened, QML-V, near-DC to >6.5GHz, fully-differential RF amplifier

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產品規格表

TRF0206-SP

現行
產品規格表 立即訂購

產品詳細資料

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 6500 Gain (typ) (dB) 16 Noise figure (typ) (dB) 8 OIP3 (typ) (dBm) 38 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 2 3rd harmonic (dBc) -68 OIP2 (typ) (dBm) 58 2nd harmonic (dBc) -60 Current consumption (mA) 130 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 6500 Gain (typ) (dB) 16 Noise figure (typ) (dB) 8 OIP3 (typ) (dBm) 38 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 2 3rd harmonic (dBc) -68 OIP2 (typ) (dBm) 58 2nd harmonic (dBc) -60 Current consumption (mA) 130 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
LCCC-FC (FFM) 12 37.82 mm² (6.2 mm × 6.1 mm)
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R2122001VXC
    • Radiation hardness assurance (RHA) up to 100-krad (Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to LET = 75 MeV-cm 2/mg
  • Qualified over the military temperature range of –55°C to +125°C
  • Excellent single-ended to differential conversion performance as ADC driver
  • Operates in differential-to-single-ended mode to work as a DAC buffer
  • 3-dB bandwidth: 6.5 GHz
  • 1-dB gain flatness: 4.8 GHz
  • Fixed single-ended-to-differential power gain of 12.5 dB
  • OIP3 performance:
    • 38 dBm at 2 GHz
    • 32 dBm at 6 GHz
  • P1dB performance:
    • 12 dBm at 2 GHz
    • 10 dBm at 6 GHz
  • Noise figure:
    • 8 dB at 2 GHz
    • 9 dB at 6 GHz
  • Gain and phase imbalance: ±0.4 dB and ±3º
  • Power-down feature
  • Single-supply operation: 3.3 V
  • Active current: 130 mA
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R2122001VXC
    • Radiation hardness assurance (RHA) up to 100-krad (Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to LET = 75 MeV-cm 2/mg
  • Qualified over the military temperature range of –55°C to +125°C
  • Excellent single-ended to differential conversion performance as ADC driver
  • Operates in differential-to-single-ended mode to work as a DAC buffer
  • 3-dB bandwidth: 6.5 GHz
  • 1-dB gain flatness: 4.8 GHz
  • Fixed single-ended-to-differential power gain of 12.5 dB
  • OIP3 performance:
    • 38 dBm at 2 GHz
    • 32 dBm at 6 GHz
  • P1dB performance:
    • 12 dBm at 2 GHz
    • 10 dBm at 6 GHz
  • Noise figure:
    • 8 dB at 2 GHz
    • 9 dB at 6 GHz
  • Gain and phase imbalance: ±0.4 dB and ±3º
  • Power-down feature
  • Single-supply operation: 3.3 V
  • Active current: 130 mA

The TRF0206-SP is a very high-performance, radiation-hardened radio-frequency (RF) amplifier optimized for RF applications. This device is an excellent choice for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high performance ADC12DJ3200QML-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process, and is available in a space-qualified, LCCC package.

The device operates on a 3.3‑V single-rail supply. A power-down feature is available for power savings.

The TRF0206-SP is a very high-performance, radiation-hardened radio-frequency (RF) amplifier optimized for RF applications. This device is an excellent choice for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high performance ADC12DJ3200QML-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process, and is available in a space-qualified, LCCC package.

The device operates on a 3.3‑V single-rail supply. A power-down feature is available for power savings.
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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TRF0206-SP Single‑Channel, 10‑MHz to 6.5‑GHz, 3‑dB BW, ADC Driver Amplifier datasheet (Rev. B) PDF | HTML 2023/8/20
* 輻射及可靠性報告 Single-Event Effects Test Report of the TRF0206-SP 8-GHz Differential Amplifier (Rev. A) PDF | HTML 2024/8/7
* 輻射及可靠性報告 TRF0206-SP Total Ionizing Dose (TID) Report PDF | HTML 2023/6/1
* 輻射及可靠性報告 TRF0206-SP (5962R2122001VXC) Neutron Displacement Damage Characterization PDF | HTML 2022/12/22
選擇指南 TI Space Products (Rev. L) 2026/3/27
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 2025/6/17
應用說明 Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 2025/6/10
更多文件說明 TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. B) 2025/2/20
證書 TRF0206EVM-CVAL EU RoHS Declaration of Conformity (DoC) (Rev. A) 2022/12/12
應用說明 Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022/10/19
應用說明 Rad-hardened FDA as Clock Buffer in Communication and Radar Payloads (Rev. A) 2019/8/2
電子書 Radiation Handbook for Electronics (Rev. A) 2019/5/21

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開發板

TRF0206EVM — TRF0206-SP 評估模組 10-MHz 至 6.5-GHz、3-dB 頻寬、單端至差分放大器

The TRF0206EVM 評估模組 (EVM) 可用於評估 TRF0206-SP 產品，其為單端輸入至差動輸出輻射強化放大器，以 6.00mm2 × 6.10mm2、12 針腳 LCC-FC 封裝提供。本產品可驅動高速差分輸入類比轉數位轉換器，且不需使用被動式平衡不平衡轉換器。

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TRF0206-SP S2D S-Parameters

SBOMCN2.ZIP (5 KB) - S 參數模型
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RF-CASCADE-CALC-TOOL — TI RF 級聯計算機

A browser-based RF lineup analysis tool supporting up to 10 stages. Computes gain, NF, OIP3, OIP2, OP1dB, and derived metrics. Features dual-axis Plotly charts, P1dB saturation detection, and export to CSV
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