UCC27201A-Q1

現行

具有 8-V UVLO 和負電壓處理功能的汽車 3-A、120-V 半橋式閘極驅動器

產品詳細資料

Bootstrap supply voltage (max) (V) 110 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -15 Features Negative voltage handling Driver configuration Noninverting
Bootstrap supply voltage (max) (V) 110 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -15 Features Negative voltage handling Driver configuration Noninverting
HSOIC (DDA) 8 29.4 mm² 4.9 x 6 VSON (DMK) 10 16 mm² 4 x 4
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 140°C Ambient Operating Temperature Range
    • Device HBM Classification Level 1C
    • Device CDM Classification Level C3
  • Negative Voltage Handling on HS (–18 V)
  • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration
  • Maximum Boot Voltage: 120 V
  • Maximum VDD Voltage: 20 V
  • On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
  • Greater than 1 MHz of Operation
  • 20-ns Propagation Delay Times
  • 3-A Sink, 3-A Source Output Currents
  • 8-ns Rise and 7-ns Fall Time with 1000-pF Load
  • 1-ns Delay Matching
  • Under Voltage Lockout for High-Side and Low-Side Driver
  • Offered in 8-Pin PowerPad SOIC-8 (DDA) and 10-Pin VSON (DMK) Packages
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 140°C Ambient Operating Temperature Range
    • Device HBM Classification Level 1C
    • Device CDM Classification Level C3
  • Negative Voltage Handling on HS (–18 V)
  • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration
  • Maximum Boot Voltage: 120 V
  • Maximum VDD Voltage: 20 V
  • On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
  • Greater than 1 MHz of Operation
  • 20-ns Propagation Delay Times
  • 3-A Sink, 3-A Source Output Currents
  • 8-ns Rise and 7-ns Fall Time with 1000-pF Load
  • 1-ns Delay Matching
  • Under Voltage Lockout for High-Side and Low-Side Driver
  • Offered in 8-Pin PowerPad SOIC-8 (DDA) and 10-Pin VSON (DMK) Packages

The UCC27201A-Q1 high frequency N-Channel MOSFET driver includes a 120-V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-Channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1-ns between the turn-on and turn-off of each other. The UCC27201A-Q1 is based on the popular UCC27200 and UCC27201 drivers, but offer some enhancements. In order to improve performance in noisy power supply environments the UCC27201A-Q1 has the ability to withstand a maximum of -18 V on its HS pin.

An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27201A-Q1 has TTL-compatible thresholds and is offered in a 10-Pin VSON and an 8-pin SOIC with a thermal pad.

For all available packages, see the orderable addendum at the end of the data sheet.

The UCC27201A-Q1 high frequency N-Channel MOSFET driver includes a 120-V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-Channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1-ns between the turn-on and turn-off of each other. The UCC27201A-Q1 is based on the popular UCC27200 and UCC27201 drivers, but offer some enhancements. In order to improve performance in noisy power supply environments the UCC27201A-Q1 has the ability to withstand a maximum of -18 V on its HS pin.

An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27201A-Q1 has TTL-compatible thresholds and is offered in a 10-Pin VSON and an 8-pin SOIC with a thermal pad.

For all available packages, see the orderable addendum at the end of the data sheet.

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類型 標題 日期
* Data sheet UCC27201A-Q1 120-V, 3-A Peak, High-Frequency, High-Side/Low-Side Driver datasheet (Rev. B) PDF | HTML 2016年 3月 23日
Application note Understanding and comparing peak current capability of gate drivers PDF | HTML 2021年 3月 30日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
Application note PFC Design Choice for On Board Charger Designs 2018年 5月 24日
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 2018年 3月 27日
Technical article Are you on-board? Demystifying EV charging systems PDF | HTML 2017年 7月 31日
Technical article 48V systems: Driving power MOSFETs efficiently and robustly PDF | HTML 2015年 10月 8日
Technical article 48V systems: Design considerations for a typical auxiliary power inverter PDF | HTML 2015年 7月 8日

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電路圖: PDF
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HSOIC (DDA) 8 檢視選項
VSON (DMK) 10 檢視選項

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