SNVSB54A May   2018  – November 2018 LM5122ZA

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Application Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Undervoltage Lockout (UVLO)
      2. 7.3.2  High-Voltage VCC Regulator
      3. 7.3.3  Oscillator
      4. 7.3.4  Slope Compensation
      5. 7.3.5  Error Amplifier
      6. 7.3.6  PWM Comparator
      7. 7.3.7  Soft Start
      8. 7.3.8  HO and LO Drivers
      9. 7.3.9  Bypass Operation (VOUT = VIN)
      10. 7.3.10 Cycle-by-Cycle Current Limit
      11. 7.3.11 Clock Synchronization
      12. 7.3.12 Maximum Duty Cycle
      13. 7.3.13 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 MODE Control (Forced-PWM Mode and Diode-Emulation Mode)
      2. 7.4.2 MODE Control (Skip-Cycle Mode and Pulse-Skipping Mode)
      3. 7.4.3 Hiccup-Mode Overload Protection
      4. 7.4.4 Slave Mode and SYNCOUT
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Feedback Compensation
      2. 8.1.2 Sub-Harmonic Oscillation
      3. 8.1.3 Interleaved Boost Configuration
      4. 8.1.4 DCR Sensing
      5. 8.1.5 Output Overvoltage Protection
      6. 8.1.6 SEPIC Converter Simplified Schematic
      7. 8.1.7 Non-Isolated Synchronous Flyback Converter Simplified Schematic
      8. 8.1.8 Negative to Positive Conversion
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Timing Resistor RT
        2. 8.2.2.2  UVLO Divider RUV2, RUV1
        3. 8.2.2.3  Input Inductor LIN
        4. 8.2.2.4  Current Sense Resistor RS
        5. 8.2.2.5  Current Sense Filter RCSFP, RCSFN, CCS
        6. 8.2.2.6  Slope Compensation Resistor RSLOPE
        7. 8.2.2.7  Output Capacitor COUT
        8. 8.2.2.8  Input Capacitor CIN
        9. 8.2.2.9  VIN Filter RVIN, CVIN
        10. 8.2.2.10 Bootstrap Capacitor CBST and Boost Diode DBST
        11. 8.2.2.11 VCC Capacitor CVCC
        12. 8.2.2.12 Output Voltage Divider RFB1, RFB2
        13. 8.2.2.13 Soft-Start Capacitor CSS
        14. 8.2.2.14 Restart Capacitor CRES
        15. 8.2.2.15 Low-Side Power Switch QL
        16. 8.2.2.16 High-Side Power Switch QH and Additional Parallel Schottky Diode
        17. 8.2.2.17 Snubber Components
        18. 8.2.2.18 Loop Compensation Components CCOMP, RCOMP, CHF
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PWP|24
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2.16 High-Side Power Switch QH and Additional Parallel Schottky Diode

Losses in the high-side N-channel MOSFET device can be separated into conduction loss, dead-time loss, and reverse recovery loss. Switching loss is calculated for the low-side N-channel MOSFET device only. Switching loss in the high-side N-channel MOSFET device is negligible because the body diode of the high-side N-channel MOSFET device turns on before and after the high-side N-channel MOSFET device switches.

High-side conduction loss is approximately calculated as follows:

Equation 42. LM5122ZA eq87_nvs954.gif

Dead-time loss is approximately calculated as follows:

Equation 43. LM5122ZA eq104_nvs954.gif

where

  • VD is the forward voltage drop of the high-side NMOS body diode.

Reverse recovery characteristics of the high-side N-channel MOSFET switch strongly affect efficiency, especially when the output voltage is high. Small reverse recovery charge helps to increase the efficiency while also minimizes switching noise.

Reverse recovery loss is approximately calculated as follows:

Equation 44. LM5122ZA eq102_nvs954.gif
Equation 45.

where

  • QRR is the reverse recovery charge of the high-side N-channel MOSFET body diode.

An additional Schottky diode can be placed in parallel with the high-side switch to improve efficiency. Usually, the power rating of this parallel Schottky diode can be less than the high-side switch’s because the diode conducts only during dead-times. The power rating of the parallel diode should be equivalent or higher than high-side switch’s if bypass operation is required, hiccup mode operation is required or any load exists before switching.