The DRV pin has high internal sink/source current capability. An external gate resistor is recommended. The value depends on the choice of power MOSFET, efficiency and EMI considerations.
As shown in Figure 44 an anti-parallel path formed by D5 and R13 are placed across the gate resistor R11 to allow turn-on and turn-off of the MOSFET to be independently adjusted.
A pull-down resistor (such as R15 in this example) on the gate of the external MOSFET is recommended to prevent the MOSFET gate from floating on if there is an open circuit error in the gate drive path. The value of R15 also affects the overload timer settings, so carefully choose the value of R15 according to Table 1.
Ensure that the noisy gate drive traces are routed away from the sensitive VSENSE pin and CS pin traces.