JAJSRW9 October   2023 BQ25176J

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Power Up from Input Source
        1. 7.3.1.1 ISET Pin Detection
        2. 7.3.1.2 VSET Pin Detection
        3. 7.3.1.3 Charger Power Up
      2. 7.3.2 Battery Charging Features
        1. 7.3.2.1 Lithium-Ion Battery Charging Profile
        2. 7.3.2.2 Input Voltage Based Dynamic Power Management (VINDPM)
        3. 7.3.2.3 Charge Termination and Battery Recharge
        4. 7.3.2.4 Charging Safety Timers
        5. 7.3.2.5 Battery Temperature Qualification (TS Pin)
      3. 7.3.3 Status Outputs ( PG, STAT)
        1. 7.3.3.1 Power Good Indicator (PG Pin)
        2. 7.3.3.2 Charging Status Indicator (STAT)
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Input Overvoltage Protection (VIN_OV)
        2. 7.3.4.2 Output Overvoltage Protection (VOUT_OVP)
        3. 7.3.4.3 Output Overcurrent Protection (IOUT_OCP)
        4. 7.3.4.4 Thermal Regulation and Thermal Shutdown (TREG and TSHUT)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown or Undervoltage Lockout (UVLO)
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Active Mode
        1. 7.4.3.1 Standby Mode
      4. 7.4.4 Fault Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Li-Ion Charger Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 サード・パーティ製品に関する免責事項
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5 Pin Configuration and Functions

GUID-20230203-SS0I-S28K-T2MH-CDVHCKSSRPJ2-low.gif Figure 5-1 DSG Package8-Pin WSONTop View
Table 5-1 Pin Functions
PIN I/O DESCRIPTION
NAME NUMBER
IN 1 P Input power, connected to external DC supply. Bypass IN with at least 1-μF capacitor to GND, placed close to the IC.
ISET 2 I Programs the device fast-charge current. External resistor from ISET to GND defines fast charge current value. Expected range is 30 kΩ (10 mA) to 375 Ω (800 mA). ICHG = KISET / RISET. Precharge current is defined as 20% of ICHG. Termination current is defined as 10% of ICHG.

TS

 3

I

 Temperature qualification voltage input. Connect a negative temperature coefficient (NTC) thermistor directly from TS to GND (AT103-2 recommended). Charge suspends when the TS pin voltage is out of range. If TS function is not needed, connect an external 10-kΩ resistor from this pin to GND. Pulling TS < VTS_ENZ will disable the charger.
GND 4 – Ground pin
STAT 5 O Open drain charger status indication output. Connect to pull-up rail via 10-kΩ resistor.
LOW indicates charge in progress. HIGH indicates charge complete or charge disabled. When a fault condition is detected STAT pin blinks at 1 Hz.
PG 6 O Open drain charge power good indication output. Connect to pull-up rail via 10-kΩ resistor.
PG pulls low when VIN > VIN_LOWV and VOUT + VSLEEPZ < VIN < VIN_OV.
VSET 7 I Programs the regulation voltage for OUT pin with a pull-down resistor. Valid resistor range is 18.2 kΩ to 100 kΩ, values outside this range will suspend charge. Refer to Section 7.3.1.2 for voltage level details. Recommend using ±1% tolerance resistor with <200 ppm/ºC temperature coefficient.
OUT 8 P Battery connection. System Load may be connected in parallel to battery. Bypass OUT with at least 1-μF capacitor to GND, placed close to the IC.
Thermal Pad — — Exposed pad beneath the IC for heat dissipation. Solder thermal pad to the board with vias connecting to solid GND plane.