JAJSO66A December   2023  – January 2024 TPS61289

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Bidirectional Operation Configuration
      2. 6.3.2 VCC Power Supply
      3. 6.3.3 VHIGH and VCC Undervoltage Lockout (UVLO)
      4. 6.3.4 Enable and Programmable EN/UVLO
      5. 6.3.5 Switching Frequency
      6. 6.3.6 Programmable Switching Peak and Valley Current Limit
      7. 6.3.7 External Clock Synchronization
      8. 6.3.8 VHIGH Overvoltage Protection
      9. 6.3.9 Thermal Shutdown
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Bootstrap Capacitor Selection
        2. 7.2.2.2 Inductor Selection
        3. 7.2.2.3 MOSFET Selection
        4. 7.2.2.4 VLOW/VHIGH Output Capacitor Selection
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
        1. 7.4.2.1 Thermal Considerations
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 サポート・リソース
    4. 8.4 Trademarks
    5. 8.5 静電気放電に関する注意事項
    6. 8.6 用語集
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.2.2.3 MOSFET Selection

The external power MOSFETs must be selected with a VDS rating that can withstand the maximum VHIGH voltage plus transient spikes (ringing). Once the voltage rating is determined, select the MOSFETs by making tradeoffs between MOSFET RDS(ON) and total gate charge (Qg) to balance conduction and switching losses. Be aware of the deadtime limitation, verify that the low-side and high-side MOSFET are not turned on simultaneously. Be careful when adding series gate resistors, as this can decrease the effective deadtime. The MOSFET gate driver current of the device is supplied from VCC. The maximum gate charge is limited by the 15mA VCC sourcing current limit. A leadless package is preferred for this high switching-frequency designs.