JAJSF47A April   2018  – May 2018 UCC28742

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      概略回路図
      2.      10W、5VのAC/DCコンバータの標準的な効率
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Detailed Pin Description
        1. 7.3.1.1 VDD (Device Bias Voltage Supply)
        2. 7.3.1.2 GND (Ground)
        3. 7.3.1.3 VS (Voltage-Sense)
        4. 7.3.1.4 DRV (Gate Drive)
        5. 7.3.1.5 CS (Current Sense)
        6. 7.3.1.6 FB (Feedback)
      2. 7.3.2 Secondary-Side Optically Coupled Constant-Voltage (CV) Regulation
      3. 7.3.3 Control Law
      4. 7.3.4 Constant Current Limit and Delayed Shutdown
      5. 7.3.5 Valley-Switching and Valley-Skipping
      6. 7.3.6 Start-Up Operation
      7. 7.3.7 Fault Protection
    4. 7.4 Device Functional Modes
  8. Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design With WEBENCH® Tools
        2. 8.2.2.2  VDD Capacitance, CDD
        3. 8.2.2.3  VDD Start-Up Resistance, RSTR
        4. 8.2.2.4  Input Bulk Capacitance and Minimum Bulk Voltage
        5. 8.2.2.5  Transformer Turns Ratio, Inductance, Primary-Peak Current
        6. 8.2.2.6  Transformer Parameter Verification
        7. 8.2.2.7  VS Resistor Divider and Line Compensation
        8. 8.2.2.8  Standby Power Estimate
        9. 8.2.2.9  Output Capacitance
        10. 8.2.2.10 Feedback Loop Design Consideration
      3. 8.2.3 Application Curves
    3. 8.3 Do's and Don'ts
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 開発サポート
        1. 11.1.1.1 WEBENCH®ツールによるカスタム設計
      2. 11.1.2 デバイスの項目表記
        1. 11.1.2.1  容量項(ファラッド単位)
        2. 11.1.2.2  デューティ・サイクル項
        3. 11.1.2.3  周波数項(ヘルツ単位)
        4. 11.1.2.4  電流項(アンペア単位)
        5. 11.1.2.5  電流および電圧のスケーリング項
        6. 11.1.2.6  変圧器の項
        7. 11.1.2.7  電力項(ワット単位)
        8. 11.1.2.8  抵抗項(オーム単位)
        9. 11.1.2.9  タイミング項(秒単位)
        10. 11.1.2.10 電圧項(ボルト単位)
        11. 11.1.2.11 AC電圧項(VRMS単位)
        12. 11.1.2.12 効率項
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Thermal Information

THERMAL METRIC UCC28742 UNIT
DBV
6 PINS
θJA Junction-to-ambient thermal resistance (1) 150 °C/W
θJCtop Junction-to-case (top) thermal resistance (2) 55 °C/W
θJB Junction-to-board thermal resistance (3) 60 °C/W
ψJT Junction-to-top characterization parameter (4) 3 °C/W
ψJB Junction-to-board characterization parameter (5) 55 °C/W
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top.  No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).