Figure 2-11 LMG2610 Function Block Diagram

The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half-bridge GaN HEMT, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9mm × 7mm QFN package.

The asymmetric GaN HEMT resistances are optimized for AHB operating conditions. Programmable turn-on slew rates provide EMI and ringing control.

The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external designs. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2610 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, undervoltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature shut down.

• 650V GaN HEMT half bridge
• 170mΩ low-side and 248mΩ high-side GaN HEMT
• Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control
• Current-sense emulation with high-bandwidth and high accuracy
• Low-side, high-side gate-drive interlock
• High-side gate-drive signal level shifter
• Smart-switched bootstrap diode function
• Low-side, high-side cycle-by-cycle overcurrent protection
• AUX idle quiescent current: 240μA
• AUX standby quiescent current: 50μA
• BST idle quiescent current: 60μA
• Maximum supply and input logic pin voltage: 26V
• 9mm × 7mm QFN package with dual thermal pads