TS3DDR3812

Name: TS3DDR3812
Brand: TI
SKU: TS3DDR3812
Price: 1.923 USD

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12-Kanal-Schalter, 3,3 V, 2:1 (SPDT) für DDR3 Anwendungen

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Datenblatt

document-pdfAcrobat 12-CHANNEL, 1:2 MUX/DEMUX SWITCH FOR DDR3 APPLICATIONS datasheet (Rev. B) (Englisch)

TS3DDR3812

AKTIV

Datenblatt

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Produktdetails

Protocols

DDR3

Configuration

2:1 SPDT

Number of channels

12

Bandwidth (MHz)

1675

Supply voltage (max) (V)

3.6

Supply voltage (min) (V)

3

Ron (typ) (mΩ)

8000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

3.6

Supply current (typ) (µA)

300

ESD HBM (typ) (kV)

2

Operating temperature range (°C)

-40 to 85

Crosstalk (dB)

-71

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

128

COFF (typ) (pF)

5.6

CON (typ) (pF)

2

Off isolation (typ) (dB)

-42

OFF-state leakage current (max) (µA)

1

Propagation delay time (µs)

0.00004

Ron (max) (mΩ)

12000

Ron channel match (max) (Ω)

1

RON flatness (typ) (Ω)

1.5

Turnoff time (disable) (max) (ns)

5

Turnon time (enable) (max) (ns)

7

VIH (min) (V)

2

VIL (max) (V)

0.8

Protocols

DDR3

Configuration

2:1 SPDT

Number of channels

12

Bandwidth (MHz)

1675

Supply voltage (max) (V)

3.6

Supply voltage (min) (V)

3

Ron (typ) (mΩ)

8000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

3.6

Supply current (typ) (µA)

300

ESD HBM (typ) (kV)

2

Operating temperature range (°C)

-40 to 85

Crosstalk (dB)

-71

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

128

COFF (typ) (pF)

5.6

CON (typ) (pF)

2

Off isolation (typ) (dB)

-42

OFF-state leakage current (max) (µA)

1

Propagation delay time (µs)

0.00004

Ron (max) (mΩ)

12000

Ron channel match (max) (Ω)

1

RON flatness (typ) (Ω)

1.5

Turnoff time (disable) (max) (ns)

5

Turnon time (enable) (max) (ns)

7

VIH (min) (V)

2

VIL (max) (V)

0.8

WQFN (RUA)

42

31.5 mm² 9 x 3.5

Compatible with DDR3 SDRAM Standard (JESD79-3D)
Wide Bandwidth of 1.675 GHz
Low Propagation Delay (t_pd= 40 ps Typ)
Low Bit-to-Bit Skew (t_sk(o) = 6 ps Typ)
Low and Flat ON-State Resistance
(r_ON = 8 Ω Typ)
Low Input/Output Capacitance
(C_ON = 5.6 pF Typ)
Low Crosstalk (X_TALK = –43 dB,
Typ at 250 MHz)
V_CC Operating Range from 3 V to 3.6 V
Rail-to-Rail Switching on Data I/O Ports
(0 to V_CC)
Separate Switch Control Logic for Upper and Lower 6-Channels
Dedicated Enable Logic Supports Hi-Z Mode
I_OFF Protection Prevents Current Leakage in Powered Down State (V_CC = 0 V)
ESD Performance Tested Per JESD22
- 2000 V Human Body Model
  (A114B, Class II)
- 1000 V Charged Device Model (C101)
42-pin RUA Package (9 × 3.5 mm, 0.5 mm Pitch)

Compatible with DDR3 SDRAM Standard (JESD79-3D)
Wide Bandwidth of 1.675 GHz
Low Propagation Delay (t_pd= 40 ps Typ)
Low Bit-to-Bit Skew (t_sk(o) = 6 ps Typ)
Low and Flat ON-State Resistance
(r_ON = 8 Ω Typ)
Low Input/Output Capacitance
(C_ON = 5.6 pF Typ)
Low Crosstalk (X_TALK = –43 dB,
Typ at 250 MHz)
V_CC Operating Range from 3 V to 3.6 V
Rail-to-Rail Switching on Data I/O Ports
(0 to V_CC)
Separate Switch Control Logic for Upper and Lower 6-Channels
Dedicated Enable Logic Supports Hi-Z Mode
I_OFF Protection Prevents Current Leakage in Powered Down State (V_CC = 0 V)
ESD Performance Tested Per JESD22
- 2000 V Human Body Model
  (A114B, Class II)
- 1000 V Charged Device Model (C101)
42-pin RUA Package (9 × 3.5 mm, 0.5 mm Pitch)

The TS3DDR3812 is a 12-channel, 1:2 multiplexer/demultiplexer switch designed for DDR3 applications. It operates from a 3 to 3.6 V supply and offers low and flat ON-state resistance as well as low I/O capacitance which allow it to achieve a typical bandwidth of 1.675 GHz.

Channels A₀ through A₁₁ are divided into two banks of six bits and are independently controlled via two digital inputs called SEL1 and SEL2. These select inputs control the switch position of each 6-bit DDR3 source and allow them to be routed to one of two end-points. Alternatively, the switch can be used to connect a single endpoint to one of two 6-bit DDR3 sources. For switching 12-bit DDR3 sources, simply connect SEL1 and SEL2 together externally and control all 12 channels with a single GPIO input. An EN input allows the entire chip to be placed into a high-impedance (Hi-Z) state while not in use.

These characteristics make the TS3DDR3812 an excellent choice for use in memory, analog/digital video, LAN, and other high-speed signal switching applications.

The TS3DDR3812 is a 12-channel, 1:2 multiplexer/demultiplexer switch designed for DDR3 applications. It operates from a 3 to 3.6 V supply and offers low and flat ON-state resistance as well as low I/O capacitance which allow it to achieve a typical bandwidth of 1.675 GHz.

Channels A₀ through A₁₁ are divided into two banks of six bits and are independently controlled via two digital inputs called SEL1 and SEL2. These select inputs control the switch position of each 6-bit DDR3 source and allow them to be routed to one of two end-points. Alternatively, the switch can be used to connect a single endpoint to one of two 6-bit DDR3 sources. For switching 12-bit DDR3 sources, simply connect SEL1 and SEL2 together externally and control all 12 channels with a single GPIO input. An EN input allows the entire chip to be placed into a high-impedance (Hi-Z) state while not in use.

These characteristics make the TS3DDR3812 an excellent choice for use in memory, analog/digital video, LAN, and other high-speed signal switching applications.

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Alle anzeigen 3

	Typ	Titel	Datum
*	Data sheet	12-CHANNEL, 1:2 MUX/DEMUX SWITCH FOR DDR3 APPLICATIONS datasheet (Rev. B)	03 Jun 2013
	Application note	Preventing Excess Power Consumption on Analog Switches	03 Jul 2008
	Application note	Semiconductor Packing Material Electrostatic Discharge (ESD) Protection	08 Jul 2004

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