TXB0104

AKTIV

Bidirektionaler Spannungspegelumsetzer, 4 Bit, automatische Richtungserkennung und ESD-Schutz bis +/

Produktdetails

Technology family TXB Applications I2S, JTAG, SPI, UART Bits (#) 4 Data rate (max) (Mbps) 100 High input voltage (min) (V) 0.78 High input voltage (max) (V) 5.5 Vout (min) (V) 1.2 Vout (max) (V) 5.5 IOH (max) (mA) -0.02 IOL (max) (mA) 0.02 Supply current (max) (µA) 10 Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Input type Standard CMOS Output type 3-State, CMOS, Push-Pull Rating Catalog Operating temperature range (°C) -40 to 85
Technology family TXB Applications I2S, JTAG, SPI, UART Bits (#) 4 Data rate (max) (Mbps) 100 High input voltage (min) (V) 0.78 High input voltage (max) (V) 5.5 Vout (min) (V) 1.2 Vout (max) (V) 5.5 IOH (max) (mA) -0.02 IOL (max) (mA) 0.02 Supply current (max) (µA) 10 Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Input type Standard CMOS Output type 3-State, CMOS, Push-Pull Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YZT) 12 3.9375 mm² 2.25 x 1.75 NFBGA (NMN) 12 5 mm² 2 x 2.5 SOIC (D) 14 51.9 mm² 8.65 x 6 TSSOP (PW) 14 32 mm² 5 x 6.4 UQFN (RUT) 12 3.4 mm² 2 x 1.7 VQFN (RGY) 14 12.25 mm² 3.5 x 3.5
  • 1.2-V to 3.6-V on A port and 1.65-V to 5.5-V on B port (VCCA ≤ VCCB)
  • VCC isolation feature: if either VCC input ss at GND, all outputs are in the high-impedance state
  • Output enable (OE) input circuit referenced to VCCA
  • Low power consumption, 5-µA maximum ICC
  • I OFF supports partial power-down mode operation
  • Latch-up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port:
      • 2500-V Human-Body Model (A114-B)
      • 1500-V Charged-Device Model (C101)
    • B Port:
      • ±15-kV Human-Body Model (A114-B)
      • 1500-V Charged-Device Model (C101)
  • 1.2-V to 3.6-V on A port and 1.65-V to 5.5-V on B port (VCCA ≤ VCCB)
  • VCC isolation feature: if either VCC input ss at GND, all outputs are in the high-impedance state
  • Output enable (OE) input circuit referenced to VCCA
  • Low power consumption, 5-µA maximum ICC
  • I OFF supports partial power-down mode operation
  • Latch-up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port:
      • 2500-V Human-Body Model (A114-B)
      • 1500-V Charged-Device Model (C101)
    • B Port:
      • ±15-kV Human-Body Model (A114-B)
      • 1500-V Charged-Device Model (C101)

This TXB0104 4-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCA must not exceed VCCB.

When the OE input is low, all outputs are placed in the high-impedance state. To ensure the high-impedance state during power up or power down, OE must be tied to GND through a pulldown resistor The current sourcing capability of the driver determines the minimum value of the resistor.

The TXB0104 device is designed so the OE input circuit is supplied by VCCA.

This device is fully specified for partial power-down applications using I OFF. The I OFF circuitry disables the outputs, which prevents damaging current backflow through the device when the device is powered down.

This TXB0104 4-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCA must not exceed VCCB.

When the OE input is low, all outputs are placed in the high-impedance state. To ensure the high-impedance state during power up or power down, OE must be tied to GND through a pulldown resistor The current sourcing capability of the driver determines the minimum value of the resistor.

The TXB0104 device is designed so the OE input circuit is supplied by VCCA.

This device is fully specified for partial power-down applications using I OFF. The I OFF circuitry disables the outputs, which prevents damaging current backflow through the device when the device is powered down.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet TXB0104 4-Bit Bidirectional Voltage-Level Translator With Automatic Direction Sensing and ±15-kV ESD Protection datasheet (Rev. J) PDF | HTML 02 Okt 2020
Application note Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 29 Sep 2023
Application brief Future-Proofing Your Level Shifter Design with TI's Dual Footprint Packages PDF | HTML 05 Sep 2023
Application note Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 28 Jun 2023
Product overview Enabling System on Module Industrial PC Connectivity With Level Translation PDF | HTML 03 Apr 2023
Application brief Enabling Smart Solar Inverter Designs with Level Translation PDF | HTML 31 Okt 2022
EVM User's guide TXB-EVM Evaluation Module User's Guide (Rev. A) PDF | HTML 02 Aug 2021
Selection guide Voltage Translation Buying Guide (Rev. A) 15 Apr 2021
Application note Optimizing Video Doorbell Designs with Common Logic Use Cases (Rev. A) PDF | HTML 01 Apr 2021
Application note 2N7001T Voltage Level Translator for SPI, UART, JTAG Interface (Rev. A) PDF | HTML 29 Mär 2021
Application note Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A) 28 Mär 2018
Application note Factors Affecting VOL for TXS and LSF Auto-bidirectional Translation Devices 19 Nov 2017
Application note Biasing Requirements for TXS, TXB, and LSF Auto-Bidirectional Translators 30 Okt 2017
Application note A Guide to Voltage Translation With TXS-Type Translators 29 Jun 2010
Application note A Guide to Voltage Translation With TXB-Type Translators 03 Mär 2010

Design und Entwicklung

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Simulationsmodell

HSPICE Model for TXB0104

SCEJ249.ZIP (109 KB) - HSpice Model
Simulationsmodell

TXB0104 IBIS Model (Rev. C)

SCEM517C.ZIP (208 KB) - IBIS Model
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Gehäuse Pins Herunterladen
DSBGA (YZT) 12 Optionen anzeigen
NFBGA (NMN) 12 Optionen anzeigen
SOIC (D) 14 Optionen anzeigen
TSSOP (PW) 14 Optionen anzeigen
UQFN (RUT) 12 Optionen anzeigen
VQFN (RGY) 14 Optionen anzeigen

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