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DRV8343-Q1

ACTIVO

Controlador de puerta trifásico con batería de 12 V a 24 V para automoción con amplificadores de

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DRV8343-Q1

ACTIVO
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Detalles del producto

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 5.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Hardware Management I/F, Independent FET Control, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 5.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Hardware Management I/F, Independent FET Control, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
HTQFP (PHP) 48 81 mm² 9 x 9
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C ≤ TA ≤ 125°C
  • Three independent half-bridge gate driver
    • Dedicated source (SHx) and drain (DLx) pins to support independent MOSFET control
    • Drives 3 high-side and 3 low-side N-channel MOSFETs (NMOS)
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 1.5-mA to 1-A peak source current
    • 3-mA to 2-A peak sink current
  • Charge-pump of gate driver for 100% Duty Cycle
  • 3 Integrated current sense amplifiers (CSAs)
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • SPI (S) and hardware (H) interface available
  • 6x, 3x, 1x, and independent PWM modes
  • Supports 3.3-V, and 5-V logic inputs
  • Charge pump output can be used to drive the reverse supply protection MOSFET
  • Linear voltage regulator, 3.3 V, 30 mA
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Charge pump undervoltage (CPUV)
    • Short to battery (SHT_BAT)
    • Short to ground (SHT_GND)
    • MOSFET overcurrent protection (OCP)
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C ≤ TA ≤ 125°C
  • Three independent half-bridge gate driver
    • Dedicated source (SHx) and drain (DLx) pins to support independent MOSFET control
    • Drives 3 high-side and 3 low-side N-channel MOSFETs (NMOS)
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 1.5-mA to 1-A peak source current
    • 3-mA to 2-A peak sink current
  • Charge-pump of gate driver for 100% Duty Cycle
  • 3 Integrated current sense amplifiers (CSAs)
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • SPI (S) and hardware (H) interface available
  • 6x, 3x, 1x, and independent PWM modes
  • Supports 3.3-V, and 5-V logic inputs
  • Charge pump output can be used to drive the reverse supply protection MOSFET
  • Linear voltage regulator, 3.3 V, 30 mA
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Charge pump undervoltage (CPUV)
    • Short to battery (SHT_BAT)
    • Short to ground (SHT_GND)
    • MOSFET overcurrent protection (OCP)
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV8343-Q1 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The dedicated Source and Drain pins enable the independent MOSFET control for solenoid application. The DRV8343-Q1 generates the correct gate drive voltages using an integrated charge pump sufficient for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The Smart Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A. The DRV8343-Q1 can operate from a single power supply and supports a wide input supply range of 5.5 to 60 V for the gate driver.

The 6x, 3x, 1x, and independent input PWM modes allow for simple interfacing to controller circuits. The configuration settings for the gate driver and device are highly configurable through the SPI or hardware (H/W) interface. The DRV8343-Q1 device integrates three low-side current sense amplifiers that allow bidirectional current sensing on all three phases of the drive stage.

A low-power sleep mode is provided to achieve low quiescent current. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phase-node short to supply and ground, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.

The DRV8343-Q1 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The dedicated Source and Drain pins enable the independent MOSFET control for solenoid application. The DRV8343-Q1 generates the correct gate drive voltages using an integrated charge pump sufficient for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The Smart Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A. The DRV8343-Q1 can operate from a single power supply and supports a wide input supply range of 5.5 to 60 V for the gate driver.

The 6x, 3x, 1x, and independent input PWM modes allow for simple interfacing to controller circuits. The configuration settings for the gate driver and device are highly configurable through the SPI or hardware (H/W) interface. The DRV8343-Q1 device integrates three low-side current sense amplifiers that allow bidirectional current sensing on all three phases of the drive stage.

A low-power sleep mode is provided to achieve low quiescent current. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phase-node short to supply and ground, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.
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Documentación técnica

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Tipo Título Fecha
* Data sheet DRV8343-Q1 12-V / 24-V Automotive Gate Driver Unit (GDU) with Independent Half Bridge Control and Three Integrated Current Sense Amplifiers datasheet (Rev. A) PDF | HTML 09 abr 2019
Application note Using DRV to Drive Solenoids (Rev. A) PDF | HTML 24 abr 2022
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 14 oct 2021
Application note Hardware Design Considerations for an Electric Bicycle using BLDC Motor (Rev. B) 23 jun 2021
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 22 jun 2021
Technical article A basic brushless gate driver design – part 3: integrated vs. discrete half bridge PDF | HTML 16 dic 2020
Technical article How analog integration simplifies automotive body motor controller designs PDF | HTML 23 oct 2020
Technical article How to efficiently drive 12-V and 24-V engine loads in automotive systems PDF | HTML 09 jul 2020
Application note Switched Reluctance Motor (SRM) Inverter Design With the DRV8343-Q1 30 ene 2020
EVM User's guide DRV8343H-Q1EVM and DRV8343S-Q1EVM User's Guide (Rev. B) 18 abr 2019
Application note Protecting Automotive Motor Drive Systems from Reverse Polarity Conditions (Rev. A) 19 feb 2019
User guide DRV8343x-Q1EVM GUI User's Guide 29 ene 2018
EVM User's guide DRV8343x-Q1EVM Independent Mode User's Guide 29 ene 2018
EVM User's guide DRV8343x-Q1EVM Sensored Software User's Guide 29 ene 2018
EVM User's guide DRV8343x-Q1EVM Sensorless Software User's Guide 29 ene 2018

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

DRV8343H-Q1EVM — Módulo de evaluación de controlador de puerta inteligente de motor trifásico para automoción DRV8343

The DRV8343H-Q1EVM evaluation module is a 6V to 60V, 20A, a highly configurable 3-phase brushless DC (BLDC) motor drive and control evaluation platform designed for 12-V to 24-V automotive systems based on the DRV8343H-Q1 automotive smart gate driver.  The EVM has onboard reverse battery (...)
Guía del usuario: PDF
No disponible en TI.com
Placa de evaluación

DRV8343S-Q1EVM — Módulo de evaluación de controlador de puerta inteligente de motor trifásico para automoción DRV8343

The DRV8343S-Q1EVM evaluation module is a 6V to 60V, 20A, a highly configurable 3-phase brushless DC (BLDC) motor drive and control evaluation platform designed for 12-V to 24-V automotive systems based on the DRV8343S-Q1 automotive smart gate driver.  The EVM has onboard reverse battery (...)
Guía del usuario: PDF
No disponible en TI.com
Modelo de simulación

DRV834XQ1 PSPICE Model

SLVMD44.ZIP (246 KB) - PSpice Model
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Herramienta de cálculo

BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
Productos y hardware compatibles

Productos y hardware compatibles

Productos
Controladores BLDC
DRV8320 — Controlador de puerta inteligente trifásico de 65 V máx. DRV8320R — Controlador de puerta inteligente trifásico de 65 V máx. con regulador de reductor DRV8323 — Controlador de puerta trifásico inteligente de 65 V máx. con amplificadores de derivación de corr DRV8323R — Controlador de puerta inteligente trifásico de 65 V máx. con regulador reductor y amplificadores de DRV8329 — Controlador de compuerta trifásico de 60 V y 1,000/2,000 mA con amplificador de detección de corrien DRV8334 — Controlador de puerta trifásico de 60 V y 1,000 mA a 2,000 mA con detección precisa de corriente DRV8340-Q1 — Controlador de puerta inteligente trifásico con batería de 12 V a 24 V para automoción DRV8343-Q1 — Controlador de puerta trifásico con batería de 12 V a 24 V para automoción con amplificadores de DRV8350 — Controlador de puerta inteligente trifásico de 102 V máx. DRV8350F — Controlador de puerta inteligente gestionado por calidad, seguridad funcional, trifásico, 102 V máx. DRV8350R — Controlador de puerta inteligente trifásico de 102 V máx. con regulador de reductor DRV8353 — Controlador de puerta trifásico inteligente de 102 V máx. con amplificadores de derivación de corrie DRV8353F — Controlador de puerta inteligente gestionado por calidad, seguridad funcional, trifásico, 102 V máx. DRV8353M — Controlador de puerta trifásico inteligente de 102 V máx. con amplificadores de derivación de corrie DRV8353R — Controlador de puerta inteligente trifásico de 102 V máx. con regulador reductor y amplificadores de
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Diseños de referencia

TIDA-060030 — Diseño de referencia de interfaz de carga del motor de 12 V a 24 V para automoción

This reference design is a 3-phase 1/2 H-Bridge Motor Drive solution with independent FET capability that interfaces with solenoid loads found in Gasoline and Diesel Engine Platforms such as automotive solenoids, bidirectional Brushed- or Brushless-DC motors, unidirectional Brushed-DC motors, and (...)
Design guide: PDF
Esquema: PDF
Paquete Pasadores Descargar
HTQFP (PHP) 48 Ver opciones
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

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