LMG1205
- Independent high-side and low-side TTL logic inputs
- 1.2-A peak source, 5-A sink current
- High-side floating bias voltage rail operates up to 100 VDC
- Internal bootstrap supply voltage clamping
- Split outputs for adjustable turnon, turnoff strength
- 0.6-Ω pulldown, 2.1-Ω pullup resistance
- Fast propagation times (35 ns typical)
- Excellent propagation delay matching (1.5 ns typical)
- Supply rail undervoltage lockout
- Low power consumption
The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.
기술 문서
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | LMG1205 100-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode datasheet (Rev. B) | PDF | HTML | 2023/04/14 |
| Application note | Implementing Bootstrap Overcharge Prevention in GaN Half-bridge Circuits | PDF | HTML | 2023/11/15 | |
| Application brief | Key Parameters and Driving Requirements of GaN FETs | PDF | HTML | 2022/08/04 | |
| Application brief | Nomenclature, Types, and Structure of GaN Transistors | PDF | HTML | 2022/08/04 | |
| Application brief | How GaN Enables More Efficient and Reduced Form Factor Power Supplies | PDF | HTML | 2022/08/02 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/02/28 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/02/28 | ||
| White paper | Optimizing multi-megahertz GaN driver design white paper (Rev. A) | 2018/11/27 | ||
| EVM User's guide | Using the LMG1205HBEVM | 2017/03/22 |
설계 및 개발
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LMG1205HBEVM — LMG1205 GaN 전력계 평가 모듈
80-V 10A Power Stage EVM - The LMG1205 half-bridge EVM board is a small, easy to use, power stage with an external PWM signal. The EVM is suitable for evaluating the performance of the LMG1205 driving a GaN half-bridge in many different DC-DC converter topologies. It can be used to estimate the (...)
PSPICE-FOR-TI — TI 설계 및 시뮬레이션 툴용 PSpice®
TI 설계 및 시뮬레이션 환경용 PSpice는 기본 제공 라이브러리를 이용해 복잡한 혼합 신호 설계를 시뮬레이션할 수 있습니다. 레이아웃 및 제작에 (...)
| 패키지 | 핀 | 다운로드 |
|---|---|---|
| DSBGA (YFX) | 12 | 옵션 보기 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.