TPS737-Q1
- Qualified for automotive applications
- AEC-Q100 qualified with the following results:
- Device temperature grade 1: –40°C to 125°C ambient operating temperature range
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4A
- Stable with 1-µF or larger ceramic output capacitor
- Input voltage range: 2.2 V to 5.5 V
- Ultra-low dropout voltage: 130 mV (typical) at 1 A
- Excellent load transient response, even with only 1-µF output capacitor
- NMOS topology delivers low reverse leakage current
- 1% initial accuracy
- 3% overall accuracy over line, load, and temperature
- Less than 20-nA (typical) quiescent current in shutdown mode
- Thermal shutdown and current limit for fault protection
- Available in multiple output voltage versions
The TPS737xx-Q1 family of linear low-dropout (LDO) voltage regulators uses an NMOS pass element in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1-µF ceramic output capacitor. The NMOS topology also allows very low dropout.
The TPS737xx-Q1 family uses an advanced BiCMOS process to yield high precision while delivering very low dropout voltages and low ground pin current. Current consumption, when not enabled, is under 20 nA and ideal for portable applications. These devices are protected by thermal shutdown and foldback current limit.
기술 문서
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모두 보기3 | 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | TPS737-Q1 1-A Low-Dropout Regulator With Reverse Current Protection datasheet (Rev. B) | 2019/09/27 | |
| Application note | LDO Noise Demystified (Rev. B) | PDF | HTML | 2020/08/18 | |
| Application note | LDO PSRR Measurement Simplified (Rev. A) | PDF | HTML | 2017/08/09 |
설계 및 개발
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| VSON (DRB) | 8 | 옵션 보기 |
주문 및 품질
포함된 정보:
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
포함된 정보:
- 팹 위치
- 조립 위치
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