전원 관리 게이트 드라이버 저압측 드라이버

UCC27444-Q1

활성

5V 입력 기능이 있는 오토모티브 4A 듀얼 채널 저압측 게이트 드라이버

제품 상세 정보

Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 4 Input supply voltage (min) (V) 4 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 125 Fall time (ns) 7 Input threshold CMOS, TTL Channel input logic Non-Inverting Input negative voltage (V) -5 Rating Automotive Driver configuration Non-Inverting
Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 4 Input supply voltage (min) (V) 4 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 125 Fall time (ns) 7 Input threshold CMOS, TTL Channel input logic Non-Inverting Input negative voltage (V) -5 Rating Automotive Driver configuration Non-Inverting
HVSSOP (DGN) 8 14.7 mm² 3 x 4.9 SOIC (D) 8 29.4 mm² 4.9 x 6
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Typical 4-A peak source and sink drive current for each channel
  • INA and INB input pins capable of handling –5 V
  • Absolute maximum VDD voltage 20 V
  • Wide VDD operating range from 4.5 V to 18 V
  • Two independent gate drive channels
  • Independent enable function for each output
  • Fast propagation delays (18-ns typical)
  • Fast rise and fall times (11-ns and 7-ns typical)
  • 1-ns typical delay matching between the two channels
  • SOIC8 and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 125°C
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Typical 4-A peak source and sink drive current for each channel
  • INA and INB input pins capable of handling –5 V
  • Absolute maximum VDD voltage 20 V
  • Wide VDD operating range from 4.5 V to 18 V
  • Two independent gate drive channels
  • Independent enable function for each output
  • Fast propagation delays (18-ns typical)
  • Fast rise and fall times (11-ns and 7-ns typical)
  • 1-ns typical delay matching between the two channels
  • SOIC8 and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 125°C

The UCC27444-Q1 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET and GaN power switches. UCC27444-Q1 has a typical peak drive strength of 4 A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (18-ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

The UCC27444-Q1 can handle –5 V at its INx inputs, which improves robustness in systems with moderate ground bouncing. The inputs can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.

The UCC27444-Q1 also features low voltage operation and power on reset (POR) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

The UCC27444-Q1 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET and GaN power switches. UCC27444-Q1 has a typical peak drive strength of 4 A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (18-ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

The UCC27444-Q1 can handle –5 V at its INx inputs, which improves robustness in systems with moderate ground bouncing. The inputs can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.

The UCC27444-Q1 also features low voltage operation and power on reset (POR) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

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기술 문서

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모두 보기2
유형 직함 날짜
* Data sheet UCC27444-Q1 20-V, 4-A Dual-Channel Low-Side Gate Driver with –5-V Input Capability For Automotive Applications datasheet (Rev. A) PDF | HTML 2023/07/20
Application note Why use a Gate Drive Transformer? PDF | HTML 2024/03/04

설계 및 개발

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평가 보드

UCC27423-4-5-Q1EVM — UCC2742xQ1 활성화를 지원하는 듀얼 4A 고속 저압측 MOSFET 드라이버 평가 모듈(EVM)

The UCC2742xQ1 EVM is a high-speed dual MOSFET evaluation module that provides a test platform for a quick and easy startup of the UCC2742xQ1 driver. Powered by a single 4V to 15V external supply, and featuring a comprehensive set of test points and jumpers. All of the devices have separate input (...)
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TI 설계 및 시뮬레이션 환경용 PSpice는 기본 제공 라이브러리를 이용해 복잡한 혼합 신호 설계를 시뮬레이션할 수 있습니다. 레이아웃 및 제작에 (...)
패키지 다운로드
HVSSOP (DGN) 8 옵션 보기
SOIC (D) 8 옵션 보기

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
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