4-Bit One-of-2 FET Multiplexer/Demultiplexer 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch - SN74CB3Q3257

SN74CB3Q3257 (ACTIVE)

4-Bit One-of-2 FET Multiplexer/Demultiplexer 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch

 

Description

The SN74CB3Q3257 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron).

Features

  • High-Bandwidth Data Path
    (up to 500 MHz)
  • 5-V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range
    (ron= 4 Ω Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input and Output Capacitance Minimizes Loading and Signal Distortion
    (Cio(OFF) = 3.5 pF Typical)
  • Fast Switching Frequency (f OE = 20 MHz Maximum)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption
    (ICC = 0.7 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface,
    Bus Isolation, Low-Distortion Signal Gating (1)

(1)For additional information regarding the performance
characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.

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Configuration
Number of Channels (#)
Power Supply Type
Vss (Min) (V)
Vss (Max) (V)
Vdd (Min) (V)
Vdd (Max) (V)
Ron (Typ) (Ohms)
Bandwidth (MHz)
Rating
Operating Temperature Range (C)
Package Size: mm2:W x L (PKG)
Package Group
Supply Range (Max)
Ron (Max) (Ohms)
Input/Output Continuous Current (Max) (mA)
Supply Current (Typ) (uA)
Supply Current (Max) (uA)
Features
OFF-state leakage current (Max) (µA)
ON-state leakage current (Max) (µA)
Input/Output ON-state Capacitance (Typ) (pF)
Input/Output OFF-state Capacitance (Typ) (pF)
ESD Charged Device Model (kV)
ESD HBM (kV)
VIL (Max) (V)
VIH (Min) (V)
SN74CB3Q3257 SN74CBT3257 SN74CBT3257C SN74CBTLV3257
2:1 SPDT    2:1 SPDT    2:1 SPDT    2:1 SPDT   
4    4    4    4   
Single    Single    Single    Single   
N/A    N/A    N/A    N/A   
N/A    N/A    N/A    N/A   
2.3    4    4    2.3   
3.6    5.5    5.5    3.6   
4    5    3    5   
500    200    200    200   
Catalog    Catalog    Catalog    Catalog   
-40 to 85    -40 to 85    -40 to 85    -40 to 85   
16SSOP: 19 mm2: 3.9 x 4.9(SSOP)
16TSSOP: 32 mm2: 6.4 x 5(TSSOP)
16TVSOP: 23 mm2: 6.4 x 3.6(TVSOP)
16VQFN: 14 mm2: 3.5 x 4(VQFN)   
16SOIC: 59 mm2: 6 x 9.9(SOIC)
16SSOP: 19 mm2: 3.9 x 4.9(SSOP)
16SSOP: 48 mm2: 7.8 x 6.2(SSOP)
16TSSOP: 32 mm2: 6.4 x 5(TSSOP)
16VQFN: 14 mm2: 3.5 x 4(VQFN)   
16SOIC: 59 mm2: 6 x 9.9(SOIC)
16SSOP: 19 mm2: 3.9 x 4.9(SSOP)
16SSOP: 48 mm2: 7.8 x 6.2(SSOP)
16TSSOP: 32 mm2: 6.4 x 5(TSSOP)
16VQFN: 14 mm2: 3.5 x 4(VQFN)   
16SOIC: 59 mm2: 6 x 9.9(SOIC)
16SSOP: 19 mm2: 3.9 x 4.9(SSOP)
16TSSOP: 32 mm2: 6.4 x 5(TSSOP)
16TVSOP: 23 mm2: 6.4 x 3.6(TVSOP)
16UQFN: 5 mm2: 1.8 x 2.6(UQFN)
16VQFN: 14 mm2: 3.5 x 4(VQFN)   
SSOP
TSSOP
TVSOP
VQFN   
SOIC
SSOP
SSOP
TSSOP
VQFN   
SOIC
SSOP
SSOP
TSSOP
VQFN   
SOIC
SSOP
TSSOP
TVSOP
UQFN
VQFN   
3.6    5.5    5.5    3.6   
9    20    12    40   
64    128    128    128   
250         
700    3    3    10   
Powered off protection      Powered off protection
-2V undershoot protection   
Powered off protection   
1    1    10     
  1      1   
10.5      16.5     
3.5    4    5.5    5.5   
1      1     
2      2    2   
0.8    0.8    0.8    0.8   
1.7    2    2    2