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UCC21530-Q1

現行

具備 IGBT/SiC 適用之 EN 與 DT 針腳的車用 4A、6A、5.7kVRMS、隔離式雙通道閘極驅動器

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最新 UCC21551-Q1 現行 具備 IGBT 與 SiC 適用之 EN 與 DT 針腳的車用 4A/6A 5kVRMS 雙通道隔離式閘極驅動器 Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

UCC21530-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • AEC-Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
    • 8-V and 12-V VDD UVLO options
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011
  • AEC-Q100 qualified with:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
    • 8-V and 12-V VDD UVLO options
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011

The UCC21530-Q1 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530-Q1 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
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類型 標題 日期
* Data sheet UCC21530-Q1 4-A, 6-A, 5.7-kVRMS Isolated Dual-Channel Gate Driver with 3.3-mm Channel-to-Channel Spacing datasheet (Rev. D) PDF | HTML 2021年 4月 29日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 2024年 2月 29日
White paper 以可靠且經濟實惠的隔離技術解決高電壓設計挑戰 (Rev. C) PDF | HTML 2024年 2月 15日
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 2024年 1月 25日
Certificate UCC21540 CQC Certificate of Product Certification 2023年 8月 17日
Certificate UCC215xx CQC Certificate of Product Certification 2023年 8月 17日
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 2022年 12月 2日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
Certificate CSA Product Certificate (Rev. A) 2019年 8月 15日
Technical article Searching for the newest innovations in power? Find them at APEC PDF | HTML 2019年 2月 9日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC21530EVM-286 — UCC21530 隔離式雙通道驅動器評估模組

UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
使用指南: PDF | HTML
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模擬型號

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice Model
下載
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
要求
參考設計

TIDM-02009 — 經 ASIL D 安全概念評估的高速牽引、雙向 DC/DC 轉換參考設計

此參考設計展現如何以單一 TMS320F28388D 即時 C2000™ MCU 控制 HEV/EV 牽引變流器和雙向 DC-DC 轉換器。牽引控制運用軟體式解析器轉數位轉換器 (RDC) 將馬達驅動至高達 20,000 RPM 的高速。DC-DC 轉換器則採用尖峰電流模式控制 (PCMC) 技術，以及全橋相移式轉換器 (PSFB) 拓撲與同步整流 (SR) 機制。牽引變流器級使用由 UCC5870-Q1 智慧閘極驅動器驅動的碳化矽 (SiC) 功率級。PCMC 波形是使用最先進的 PWM 模組和比較器子系統 (CMPSS)中的內建傾斜補償產生。ASIL (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDA-01605 — 具有二級關閉保護功能的車用雙通道 SiC MOSFET 閘極驅動器參考設計

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDM-02002 — 適用於 HEV/EV 車載充電器的雙向 CLLLC 共振雙主動橋式 (DAB) 參考設計

CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage applications. This design illustrates control of this power topology using a C2000™ (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDM-02012 — 採用 MathWorks® 的高電壓 HEV/EV HVAC eCompressor 馬達控制參考設計

TIDM-02012 是一款高電壓、5kW 參考設計，專為 HEV/EV 壓縮機 (eCompressor) 應用而打造，由中階性能 C2000™ TMS320F28003x 即時 MCU 控制。其設計用於評估 400V 和 800V DC 匯流排，能涵蓋更高電池電壓的市場趨勢。基於 controlCARD 的設計讓使用者能夠評估多個 MCU 和閘極驅動器選項，並可視需求擴充以支援 C2000™ 產品組合中的其他裝置，包括未來發展藍圖中的裝置，以滿足日益增長的網路安全、功能安全和其他汽車市場需求。

MathWorks (...)

Design guide: PDF
參考設計

PMP21999 — 使用 PCB 繞組變壓器的 6.6 kW、雙向 CLLLC 共振轉換器參考設計

This 6.6 kW, bi-directional, dual-active-bridge resonant converter reference design allows 380 VDC to 600 VDC input and 280 VDC to 450 VDC output. PCB winding transformer and Rogowski coil synchronous rectifier (SR) control are applied in this design for power density and efficiency optimization. (...)
Test report: PDF
電路圖: PDF
參考設計

PMP21561 — 安全隔離次級 SiC MOSFET 驅動器參考設計

This reference design provides an integrated high and low side isolated secondary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
電路圖: PDF
參考設計

PMP21553 — 安全隔離主要 SiC MOSFET 驅動器參考設計

This reference design provides an integrated high and low side isolated primary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
電路圖: PDF
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