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Wednesday, July 22
10:50 AM
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Oral presentation
Ballroom A
D-4
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Total-Ionizing-Dose Effects in AlGaN/GaN FinFETs
AlGaN/GaN FinFETs and otherwise similar planar devices were subjected to 1.8-MeV proton irradiation and 10-keV X-ray irradiation. FinFETs exhibit less degradation in threshold voltage and transconductance than planar devices as a result of enhanced gate control.
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T. Liu, H. Lee, S. Islam, E. Zhang, R. Reed, R. Schrimpf, S. Rajan, D. Fleetwood
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Wednesday, July 22
2:50 PM - 4:50 PM
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Poster
Session A
PH-1
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Investigating Flux Dependent Fault Masking and Recoverability in a Mixed-Signal SoC via Spatial and Temporal Gating
Flux dependent fault masking in a TI F28377D-SEP microcontroller is investigated using a high-speed shutter and 3-D printed physical masks, showing how temporal and spatial gating can expose hidden unrecoverable faults during accelerated SEE testing.
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A. Dwadasi, R. Rodriguez-Davila, M. Pate, T. Nikoubin, R. Baumann
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Thursday, July 23
1:30 PM - 3:20 PM
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Data workshop
Ballroom B
DW-12
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Heavy Ion Characterization of F28377D-SEP Microcontroller
This work reports the SEL, SEU and SEFI test results obtained from Heavy-Ion testing of TI F28377D-SEP Microcontroller. This dual-core microcontroller is designed for real-time closed-loop control in power and motor-drive applications with dedicated peripherals.
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A. Dwadasi, R. Rodriguez-Davila, M. Pate, T. Nikoubin, R. Baumann
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Thursday, July 23
1:30 PM - 3:20 PM
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Data workshop
Ballroom B
DW-13
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Radiation Evaluation of the TPS7H1301-SP 3V to 6.3V Input, 400mA, -6V to -0.6V Radiation-Hardened Switched Capacitor Voltage Inverter with Integrated Low Dropout Regulator
Single Events Effects and Total Ionizing Dose results for the TPS7H1301-SP 3V to 6.3V Input, Switched Capacitor Voltage Inverter is summarized, showing robust SEE performance up to LETEFF=75MeV-cm2/mg and excellent TID performance up to 100krad(Si).
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A. Marinelarena, T. Lew, M. Trevino