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TPS7H6101-SEP

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Radiation-tolerant, 200V 10A GaN power stage with integrated driver

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Data sheet

document-pdfAcrobat TPS7H6101-SEP 200V, 10A GaN Half Bridge Power Stage datasheet (Rev. A) PDF | HTML

TPS7H6101-SEP

ACTIVE

Data sheet

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Product details

VDS (max) (V)

200

RDS(on) (mΩ)

15

Features

Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection

Rating

Space

Operating temperature range (°C)

-55 to 125

VDS (max) (V)

200

RDS(on) (mΩ)

15

Features

Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection

Rating

Space

Operating temperature range (°C)

-55 to 125

UNKNOWN (NPR)

64

See data sheet

LGA (NPR)

64

11664 mm² (108 mm × 108 mm)

Radiation performance:
- Total ionizing dose (TID) characterized(1)
  - Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
- Single-event effects (SEE) characterized(2)
  - Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
  - Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
200V ehancement mode (e-mode) GaN FET half bridge
- 15mΩRDS(ON) (typical)
- Up to 2MHz operation
LGA package:
- Thermally optimized 12mm × 9mm LGA package with thermal pads
- Integrated gate drive resistors
- Low common source inductance packaging
- Electrically isolated high-side and low-side
Flexible control for various half-bridge and two switch power supply topologies
- Low propagation delay
- Two operational modes
  - Single PWM input with adjustable dead time
  - Two independent inputs
- Programmable dead time control
- Selectable input interlock protection in independent input mode
- 5V gate drive supply for robust FET operation

Radiation performance:
- Total ionizing dose (TID) characterized(1)
  - Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
- Single-event effects (SEE) characterized(2)
  - Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
  - Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
200V ehancement mode (e-mode) GaN FET half bridge
- 15mΩRDS(ON) (typical)
- Up to 2MHz operation
LGA package:
- Thermally optimized 12mm × 9mm LGA package with thermal pads
- Integrated gate drive resistors
- Low common source inductance packaging
- Electrically isolated high-side and low-side
Flexible control for various half-bridge and two switch power supply topologies
- Low propagation delay
- Two operational modes
  - Single PWM input with adjustable dead time
  - Two independent inputs
- Programmable dead time control
- Selectable input interlock protection in independent input mode
- 5V gate drive supply for robust FET operation

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver. Integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

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Technical documentation

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Top documentation	Type	Title	Format options	Date
*	Data sheet	TPS7H6101-SEP 200V, 10A GaN Half Bridge Power Stage datasheet (Rev. A)	PDF \| HTML	Mar 26, 2026
*	Radiation & reliability report	Single-Event Effects (SEE) Radiation Report of the TPS7H6101-SEP	PDF \| HTML	Apr 2, 2026
*	Radiation & reliability report	TPS7H6101-SEP Production Flow and Reliability Report (Rev. A)	PDF \| HTML	Mar 27, 2026
*	Radiation & reliability report	TPS7H6101 Neutron Displacement Damage (NDD) Characterization Report		Feb 20, 2026
*	Radiation & reliability report	TPS7H6101-SEP Total Ionizing Dose (TID) Radiation Report (Rev. A)		Jan 28, 2026
	White paper	IC Sourcing for Space: Pros and Cons of Up-screening COTS Versus Space Enhanced Products (SEP)	PDF \| HTML	Jul 28, 2026
	Application note	Highly Scalable Space Motor Control Platform based on TI’s Space Enhanced Products (-SEP) and Space Products	PDF \| HTML	Jun 8, 2026
	Selection guide	TI Space Products (Rev. L)		Mar 27, 2026
	Certificate	TPS7H6101EVM EU Declaration of Conformity (DoC)	PDF \| HTML	Apr 16, 2025
	Application note	Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A)	PDF \| HTML	Sep 15, 2022
	E-book	Radiation Handbook for Electronics (Rev. A)		May 21, 2019

Design & development

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Evaluation board

TPS7H6101EVM — TPS7H6101-SEP evaluation module

The TPS7H6101EVM uses an input voltage rail on J13 to power the PVIN of 100V. By default, the device runs PWM mode and IIM mode can be used with minimal changes. Inputting a 0V to 5V waveform on J8 the TPS7H6101-SP will run as a buck converter of the duty cycle and frequency you select. The (...)

User guide: PDF | HTML

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Simulation model