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Gallium nitride (GaN) power stages
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TPS7H6101-SEP

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Data sheet

TPS7H6101-SEP

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 200 RDS(on) (mΩ) 15 Features Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection Rating Space Operating temperature range (°C) -55 to 125
VDS (max) (V) 200 RDS(on) (mΩ) 15 Features Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection Rating Space Operating temperature range (°C) -55 to 125
UNKNOWN (NPR) 64 See data sheet LGA (NPR) 64 11664 mm² (108 mm × 108 mm)
  • Radiation performance:
    • Total ionizing dose (TID) characterized(1)
      • Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
    • Single-event effects (SEE) characterized(2)
      • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
      • Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
  • 200V ehancement mode (e-mode) GaN FET half bridge
    • 15mΩRDS(ON) (typical)
    • Up to 2MHz operation
  • LGA package:
    • Thermally optimized 12mm × 9mm LGA package with thermal pads
    • Integrated gate drive resistors
    • Low common source inductance packaging
    • Electrically isolated high-side and low-side
  • Flexible control for various half-bridge and two switch power supply topologies
    • Low propagation delay
    • Two operational modes
      • Single PWM input with adjustable dead time
      • Two independent inputs
    • Programmable dead time control
    • Selectable input interlock protection in independent input mode
    • 5V gate drive supply for robust FET operation
  • Radiation performance:
    • Total ionizing dose (TID) characterized(1)
      • Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
    • Single-event effects (SEE) characterized(2)
      • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
      • Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
  • 200V ehancement mode (e-mode) GaN FET half bridge
    • 15mΩRDS(ON) (typical)
    • Up to 2MHz operation
  • LGA package:
    • Thermally optimized 12mm × 9mm LGA package with thermal pads
    • Integrated gate drive resistors
    • Low common source inductance packaging
    • Electrically isolated high-side and low-side
  • Flexible control for various half-bridge and two switch power supply topologies
    • Low propagation delay
    • Two operational modes
      • Single PWM input with adjustable dead time
      • Two independent inputs
    • Programmable dead time control
    • Selectable input interlock protection in independent input mode
    • 5V gate drive supply for robust FET operation

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver. Integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver. Integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet TPS7H6101-SEP 200V, 10A GaN Half Bridge Power Stage datasheet (Rev. A) PDF | HTML Mar 26, 2026
* Radiation & reliability report TPS7H6101-SEP Total Ionizing Dose (TID) Radiation Report (Rev. B) Aug 21, 2026
* Radiation & reliability report Single-Event Effects (SEE) Radiation Report of the TPS7H6101-SEP PDF | HTML Apr 2, 2026
* Radiation & reliability report TPS7H6101-SEP Production Flow and Reliability Report (Rev. A) PDF | HTML Mar 27, 2026
* Radiation & reliability report TPS7H6101 Neutron Displacement Damage (NDD) Characterization Report Feb 20, 2026
Application note How to Run Matlab© Simulink© Motor Control Example on C2000 LaunchPad™ Development Kit PDF | HTML Sep 15, 2026
White paper IC Sourcing for Space: Pros and Cons of Up-screening COTS Versus Space Enhanced Products (SEP) PDF | HTML Jul 28, 2026
Application note Highly Scalable Space Motor Control Platform based on TI’s Space Enhanced Products (-SEP) and Space Products PDF | HTML Jun 8, 2026
Selection guide TI Space Products (Rev. L) Mar 27, 2026
Certificate TPS7H6101EVM EU Declaration of Conformity (DoC) PDF | HTML Apr 16, 2025
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML Sep 15, 2022
E-book Radiation Handbook for Electronics (Rev. A) May 21, 2019

Design & development

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Evaluation board

TPS7H6101EVM — TPS7H6101-SEP evaluation module

The TPS7H6101EVM uses an input voltage rail on J13 to power the PVIN of 100V. By default, the device runs PWM mode and IIM mode can be used with minimal changes. Inputting a 0V to 5V waveform on J8 the TPS7H6101-SP will run as a buck converter of the duty cycle and frequency you select. The (...)
User guide: PDF | HTML
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Simulation model

TPS7H6101-SP PSpice Transient Model

SNOM820.ZIP (66 KB) - PSpice model
Supported products & hardware
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UNKNOWN (NPR) 64 Ultra Librarian
LGA (NPR) 64 Ultra Librarian
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