10 Revision History
Changes from June 15, 2023 to October 31, 2025 (from Revision B (JUNE 2023) to Revision C (OCTOBER 2025))
-
Global: Removed references to Industrial functional
safetyGo
-
Global: Updated the introductory sentence in 10 timing
sections.Go
- (Features): Added "/SDIO" to the Multi-Media Card/Secure Digital
bullet in Media and Data StorageGo
- (Features): Removed the "Trace over USB supported" bullet from
High-Speed InterfacesGo
-
Global: Moved the Revision History section to the back of the documentGo
- (Description): Removed the list of applications and corrected typographical
errorsGo
- (Description): Removed sentence describing package optionsGo
- (Package Information): Added 13mm×13mm ALW package options for AM625-Q1 and
AM620-Q1.Go
- (Device Comparison): Updated total number of available external
General-Purpose I/Os in the device from 170 to 168Go
- (Device Comparison): Updated the name of the JTAG User ID
registerGo
- (Device Comparison): Changed "Up to 1GB" to "Up to 128MB" in the
General-Purpose Memory Controller descriptionGo
- (Device Comparison): Changed "LVDS" to "OLDI (LVDS)" in the Display
Subsystem descriptionGo
- (Device Comparison): Added row to indicate GTC
supportGo
- (Related Products): Added links to products for design
completionGo
- (ALW FCCSP Pin Diagram): Changed the figure from a bottom view a top
viewGo
- (AMC FCBGA Pin Diagram): Changed the figure from a bottom view a top
viewGo
- (EPWM0 Signal Descriptions): Updated the EHRPWM0_SYNCO descriptionGo
- (MMC2 Signal Descriptions): Added Note 2 to the MMC2_SDCD and MMC2_SDWP signalsGo
- (Power Supply Signal Descriptions): Updated the table notes associated with the CAP_VDDSx pins to clarify the need for capacitance derating and describe additional connectivity options Go
- (Power Supply Signal Descriptions): Updated the description of several power rails to clarify their functionGo
- (MCU System Signal Descriptions): Updated the description of the MCU_PORz signal functionGo
- (UART1 Signal Descriptions): Corrected the description for UART1_DCDnGo
- (Pin Connectivity Requirements): Updated the connectivity
requirements description for MCU_I2C0 and WKUP_I2C0 balls to allow connecting
external pull-down resistors when selecting a GPIO signal
functionGo
- (Connectivity Requirements): Updated the Connection Requirements
descriptions for CSI0 balls to clarify connectivity expectations when not using
all four lanesGo
- (Pin Connectivity Requirements): Updated the VMON_3P3_SOC
connectivity requirementsGo
- (Absolute Maximum Ratings): Updated the description of several power rails
to clarify their functionGo
- (ESD Ratings): Added ALW corner pins to ESD Ratings section for
AEC-Q100 qualified devicesGo
- (Recommended Operating Conditions): Updated the description of
several power rails to clarify their functionGo
- (I2C Open-Drain, and Fail-Safe Electrical Characteristics) Added a table
note to the Input Leakage Current parameterGo
- (I2C Open-Drain, and Fail-Safe Electrical Characteristics) Separated the
Input Leakage Current Test Conditions into two rowsGo
- (Fail-Safe Reset Electrical Characteristics) Added a table note to the Input
Leakage Current parameterGo
- (Fail-Safe Reset Electrical Characteristics) Separated the Input Leakage
Current Test Conditions into two rowsGo
- (High-Frequency Oscillator Electrical Characteristics) Added a table
note to the Input Leakage Current parameterGo
- (High-Frequency Oscillator Electrical Characteristics) Separated the
Input Leakage Current Test Conditions into two rowsGo
- (Low-Frequency Oscillator Electrical Characteristics) Added a table
note to the Input Leakage Current parameterGo
- (Low-Frequency Oscillator Electrical Characteristics) Separated the
Input Leakage Current Test Conditions into two rowsGo
- (SDIO Electrical Characteristics) Added a table note to the Input
Leakage Current parameterGo
- (SDIO Electrical Characteristics) Separated the Input Leakage
Current Test Conditions into two rowsGo
- (SDIO Electrical Characteristics): Changed VDDSHV5 power rail name
used to define the
VIL/VILSS/VIH/VIHSS/VOL/VOH
parameter values by referencing a generic power rail name (VDD), where
applicable, and added an associated table noteGo
- (LVCMOS Electrical Characteristics) Added a table note to the Input Leakage
Current parameterGo
- (LVCMOS Electrical Characteristics) Separated the Input Leakage Current Test
Conditions into two rowsGo
- (Recommended Operating Conditions for OTP eFuse Programming):
Removed the OPP NOM (BOOT) reference from the VDD_CORE parameter description,
and changed the VPP Slew Rate description to clarify it only applies to
power-upGo
- (Impact to Your Hardware Warranty): Updated/Changed the "Consequently, TI will have no …" sentence in the paragraphGo
- (Thermal Resistance Characteristics): Added NoteGo
- (Thermal Resistance Characteristics for ALW and AMC Package): Updated the
thermal parameter values for the ALW package that is not AEC - Q100 qualified, and added
thermal parameter values for the ALW package that is AEC - Q100 qualifiedGo
- (Temperature Sensor Characteristics): Added new section to define
Voltage and Temperature Module (VTM) on die temperature sensor
characteristicsGo
- (Power-Up Sequencing): Added note to clarify power rails must decay
below 300mv before initiating a new power-up sequenceGo
- (Power-Up Sequencing): Added the missing VDDA_1P8_OLDI0 power rail
to Waveform C in the Power-Up Sequencing - Supply / Signal Assignments
tableGo
- (Power-Down Sequencing): Added note to clarify power rails must
decay below 300mv before initiating a new power-up sequenceGo
- (Power-Down Sequencing): Added the missing VDDA_1P8_OLDI0 power rail
to Waveform C in the Power-Down Sequencing - Supply / Signal Assignments
tableGo
- (Power-Down Sequencing – Supply / Signal Assignments): Changed
VDDSHV_CANUART to VDD_CANUART in table note 4Go
- (Power-Down Sequencing): Updated the Power-Down Sequence diagram to
account for a use case where the system power remains turned on while the device
power management solution is turned off. Also included an option that allows the
ramp-down of IO power rails to be extended until the last core power rail ramps
down and it is possible for MCU_PORz to be asserted before the supplies begin to
sequence offGo
- (Reset Timing Conditions): Changed the Input slew rate minimum values for VDD = 1.8V and VDD = 3.3V (original values were swapped)Go
- (BOOTMODE Timing Requirements): Updated the description for
parameters RST23 and RST24Go
- (Input Clocks / Oscillators): Added VOUT0_EXTPCLKINGo
- (MCU_OSC0 LVCMOS Digital Clock Source): Added additional notes and the new
MCU_OSC0 LVCMOS Digital Clock Source Requirements tableGo
- (WKUP_LFOSC0 Crystal Electrical Characteristics) Included a new
parameter that defines the maximum Crystal Frequency Stability and
Tolerance.Go
- (PLLs): Updated the PLL names to include it's number reference used in the
TRMGo
- (CPSW3G MDIO Timing): Changed the minimum setup time value (parameter MDIO1)
from "90" to "45". Also changed the minimum and maximum output delay time values
(parameter MDIO7) from "-150" and "150" to "-10" and "10" respectivelyGo
- (CPSW3G MDIO Timing Conditions): Added propagation delay and propagation
delay mismatch timing parametersGo
- (CPSW3G RMII Timing Conditions): Changed the maximum input slew rate for
both operating voltagesGo
- (CPSW3G RGMII Timing Conditions): Added operating voltage conditions
to the Input Slew Rate parameter to allow a relaxed slew rate when operating at
1.8VGo
- (CPTS): Updated reference name for the TRM section under the timing
tables.Go
- (CSI-2): Included a comment in the note that explains port instance
name relationship and removed the first paragraph since it didn't contain any
information related to Timing and Switching CharacteristicsGo
- (ECAP – Timing Requirements and Switching Characteristics): Updated
the clock source referenced in table note 1Go
- (EPWM – Timing Requirements and Switching Characteristics): Updated
the clock source referenced in table note 1Go
- (EQEP – Timing Requirements): Updated the clock source referenced in
table note 1Go
- (GPIO Timing Conditions): Updated the Input slew rate parameter to
include operating voltage with relaxed minimum values and corrected a
typographical error on the maximum value of the I2C OD FS buffer type operating
at 3.3V. The previous maximum value of 0.8V/ns should have been 0.08V/ns for it
to be equivalent to the maximum value of 8E+7 defined in the Electrical
Characteristics table for the I2C OD FS bufferGo
- (GPIO Timing Requirements): Removed the voltage conditions in the
MODE column and changed the minimum value to accommodate the reduced minimum
Input Slew Rate values in the GPIO Timing Conditions tableGo
- (GPMC and NOR Flash Timing Requirements — Synchronous Mode): Removed
the GPMC_FCLK=100MHz column timing values and the associated not_div_by_1_mode
timing values for GPMC_FCLK=133MHz. Simplified several parameter descriptions.
Also removed two table notes, one that described register configuration for
GPMC_FCLK selection, and another that described register configuration for
div_by_1_modeGo
- (GPMC and NOR Flash Switching Characteristics – Synchronous Mode):
Removed the GPMC_FCLK=100MHz column timing values and the associated
not_div_by_1_mode timing values for GPMC_FCLK=133MHz. Simplified several
parameter descriptions. Changed the timing variable in parameters F3 and F11 to
"D". Removed the "J" timing variable from the F15 and F17 parameters. Updated
the table notesGo
- (GPMC and NOR Flash Timing Requirements – Asynchronous Mode):
Removed the MODE column and the table note that described register configuration
for div_by_1_mode. Added the correct table note for parameter FA21 Go
- (GPMC and NOR Flash Switching Characteristics – Asynchronous Mode):
Removed the MODE column and redundant rows. Also removed the table note that
described register configuration for div_by_1_modeGo
- (GPMC and NAND Flash Timing Requirements – Asynchronous Mode):
Removed the MODE column and the table note that described register configuration
for div_by_1_modeGo
- (GPMC and NAND Flash Switching Characteristics – Asynchronous Mode):
Removed the MODE column and the table note that described register configuration
for div_by_1_mode. Added table notes and associated reference links for timing
variables B, C, D, E, F, G, H, I, K, L, and MGo
- (I2C): Changed the maximum slew rate value from 0.8V/ns to 0.08V/ns
and added "when operating at 3.3V" to clarify the exception is not applicable to
1.8V operationGo
- (I2C): Changed the supported speeds and exception descriptions so
they are organized based on IO buffer type rather than I2C port
instanceGo
- (MCAN): Updated reference name for the TRM section under the timing
tables.Go
- (MCASP): Changed the IOSET note that explains timing limitations
associated with valid pin combinationsGo
- (MCSPI): Changed the IOSET note that explains timing limitations
associated with valid pin combinationsGo
- (MCSPI Switching Characteristics - Controller Mode): Replaced
previous table notes 2 and 3 with new table notes 2, 3, 4, and
5Go
- (MMC0 - eMMC/SD/SDIO Interface): Clarified the Default Speed, High
Speed, UHS-I SDR12, and UHS-I SDR25 modes are only available for connectivity to
embedded SDIO devices, and removed the UHS-I SDR50, UHS-I DDR50, and UHS-I
SDR104 modesGo
- (MMC0 DLL Delay Mapping for all Timing Modes): Changed the register
name, changed the OTAPDLYENA and OTAPDLYSEL values for Legacy SDR, High Speed
SDR, Default Speed, and High Speed modes, and removed the CLKBUFSEL column
because this register bit field doesn't provide any functionGo
- (HS200 Mode): Added "MMC0 Timing RequirementsGo
- (MMC1/MMC2 DLL Delay Mapping for all Timing Modes): Changed the
register names, and changed the OTAPDLYENA and OTAPDLYSEL values for Default
Speed and High Speed modesGo
- (MMC1/MMC2 DLL Delay Mapping for all Timing Modes): Removed the
CLKBUFSEL column because this register bit field doesn't provide any
functionGo
- (OLDI0 Switching Characteristics): Changed the formulas in
parameters OLDI5 through OLDI11Go
- (OSPI0 DLL Delay Mapping for PHY Data Training): Added a delay value
for the "PHY_MASTER_PHASE_DETECT_SELECTOR_FLD" register bit
fieldGo
- (OSPI0 Timing Requirements – PHY Data Training): Added three new
timing parameters. Two that define timing parameters associated with SRD with
External Board Loopback, and one that defines the minimum input data valid
window for each mode. Also updated Note 1 to clarify the purpose of the new data
valid window parameterGo
- (OSPI0 Timing Requirements – PHY Data Training, SDR with External
Board Loopback): Added a new timing requirements diagram for SDR with External
Board LoopbackGo
- (OSPI Switching Characteristics – PHY Data Training): Added seven
new timing parameters. Six that define timing parameters associated with SRD
with External Board Loopback, and one that defines the maximum output data valid
window for each modeGo
- (OSPI Switching Characteristics – PHY Data Training): Corrected the
formulas associated with timing parameters O5 and O11Go
- (OSPI0 Switching Characteristics – PHY SDR Data Training): Added a
new switching characteristics diagram for SDR with External Board
LoopbackGo
- (OSPI0 DLL Delay Mapping for PHY SDR Timing Modes): Added a delay
value for the "PHY_MASTER_PHASE_DETECT_SELECTOR_FLD" register bit
fieldGo
- (OSPI0 Switching Characteristics – PHY SDR Mode): Corrected the
formulas associated with timing parameters O10 and O11Go
- (OSPI0 DLL Delay Mapping for PHY DDR Timing Modes): Added a delay
value for the "PHY_MASTER_PHASE_DETECT_SELECTOR_FLD" register bit
fieldGo
- (OSPI0 Switching Characteristics – PHY DDR Mode): Corrected the
formulas associated with timing parameters O4 and O5Go
- (Overview): Removed the list of applications and corrected typographical
errorsGo
- (Overview): Removed sentence describing package optionsGo
- (Detailed Description – A53SS): Added clarification regarding the A53SS
features supported by the device.Go
- (Detailed Description – DMSS): Added reference to the TRM to ensure
consistency with the structure and formatting of other sections in the
datasheet.Go
- (Detailed Description – PDMA): Added clarification regarding the
PDMA features supported by the deviceGo
- (Detailed Description – CPSW3G): Added clarification regarding the CPSW3G features
supported by the device.Go
- (Detailed Description – DDRSS): Added clarification regarding the DDRSS features supported by the device.Go
- (Detailed Description – ECAP): Added clarification regarding the
ECAP features supported by the device.Go
- (Detailed Description – ELM): Added clarification
regarding the ELM features supported by the
device.Go
- (Detailed Description – EPWM): Added clarification regarding the
EPWM features supported by the device.Go
- (Detailed Description – EQEP): Added clarification
regarding the EQEP features supported by the
deviceGo
- (Detailed Description – GPIO):
Added clarification regarding the GPIO features
supported by the device.Go
- (Detailed Description – GTC): Added clarification regarding the GTC
features supported by the deviceGo
- (Detailed Description – I2C): Updated the first sentence to ensure
consistency with the structure and formatting of other sections in the datasheet
and updated the I/O buffer referencesGo
- (Detailed Description – MCAN): Added clarification regarding the
MCAN features supported by the device.Go
- (Detailed Description – McASP): Removed the first sentence to ensure
consistency with the structure and formatting of other sections in the
documentGo
- (Detailed Description – MCSPI): Added clarification regarding the MCSPI
features supported by the deviceGo
- (Detailed Description – MMCSD): Added clarification regarding the
MMCSD features supported by the device.Go
- (Detailed Descriprion - OSPI): Added clarification regarding the
OSPI features supported by the device.Go
- (Detailed Description – Timers): Added clarification regarding the
Timers features supported by the deviceGo
- (Detailed Description – UART):
Added clarification regarding the UART features
supported by the deviceGo
- (Detailed Description – USBSS): Added clarification regarding the
USBSS features supported by the deviceGo
- (USB VBUS Design Guidelines): Changed the 3.5kΩ resistor value to 3.48kΩ
since 3.5kΩ is not a standard value for 1% resistorsGo
- (Clock Routing Guidelines): Added new sectionGo
- (Device Naming Convention): Added Device revision BGo
- (Tools and Software): Added clarification regarding the SysConfig
featuresGo