SLUSF18A October   2023  – December 2023 BQ25638

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Description (continued)
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power-On-Reset (POR)
      2. 7.3.2  Device Power Up from Battery
      3. 7.3.3  Device Power Up from Input Source
        1. 7.3.3.1 REGN LDO Power Up
        2. 7.3.3.2 Poor Source Qualification
        3. 7.3.3.3 Input Voltage Limit Threshold Setting (VINDPM Threshold)
        4. 7.3.3.4 Converter Power-Up
        5. 7.3.3.5 Input Current Optimizer (ICO)
        6. 7.3.3.6 Switching Frequency and Dithering Feature
      4. 7.3.4  Power Path Management
        1. 7.3.4.1 Narrow VDC Architecture
        2. 7.3.4.2 Dynamic Power Management
          1. 7.3.4.2.1 Input Current Limit on ILIM Pin
        3. 7.3.4.3 High Impedance (HIZ) Mode
      5. 7.3.5  Battery Charging Management
        1. 7.3.5.1 Autonomous Charging Cycle
        2. 7.3.5.2 Battery Charging Profile
        3. 7.3.5.3 Charging Termination
        4. 7.3.5.4 Thermistor Qualification
          1. 7.3.5.4.1 Advanced Temperature Profile in Charge Mode
          2. 7.3.5.4.2 TS Pin Thermistor Configuration
          3. 7.3.5.4.3 Cold/Hot Temperature Window in OTG Mode
          4. 7.3.5.4.4 JEITA Charge Rate Scaling
          5. 7.3.5.4.5 TS_BIAS Pin
        5. 7.3.5.5 Charging Safety Timers
      6. 7.3.6  USB On-The-Go (OTG)
        1. 7.3.6.1 Boost OTG Mode
      7. 7.3.7  Integrated 12-bit ADC for Monitoring
      8. 7.3.8  Status Outputs (INT , PG , STAT)
        1. 7.3.8.1 PG Pin Power Good Indicator
        2. 7.3.8.2 Charging Status Indicator (STAT)
        3. 7.3.8.3 Interrupt to Host (INT)
      9. 7.3.9  BATFET Control
        1. 7.3.9.1 Shutdown Mode
        2. 7.3.9.2 Ultra-Low Power Mode
        3. 7.3.9.3 System Power Reset
      10. 7.3.10 Protections
        1. 7.3.10.1 Voltage and Current Monitoring in Battery Only and HIZ Modes
          1. 7.3.10.1.1 Battery Overcurrent Protection
          2. 7.3.10.1.2 Battery Undervoltage Lockout
        2. 7.3.10.2 Voltage and Current Monitoring in Forward Mode
          1. 7.3.10.2.1 Input Overvoltage
          2. 7.3.10.2.2 System Overvoltage Protection (SYSOVP)
          3. 7.3.10.2.3 Forward Converter Cycle-by-Cycle Current Limit
          4. 7.3.10.2.4 System Short
          5. 7.3.10.2.5 Battery Overvoltage Protection (BATOVP)
          6. 7.3.10.2.6 Sleep and Poor Source Comparators
        3. 7.3.10.3 Voltage and Current Monitoring in Reverse Mode
          1. 7.3.10.3.1 Boost Mode Overvoltage Protection
          2. 7.3.10.3.2 Boost Mode Duty Cycle Protection
          3. 7.3.10.3.3 Boost Mode PMID Undervoltage Protection
          4. 7.3.10.3.4 Boost Mode Battery Undervoltage
          5. 7.3.10.3.5 Boost Converter Cycle-by-Cycle Current Limit
          6. 7.3.10.3.6 Boost Mode SYS Short
        4. 7.3.10.4 Thermal Regulation and Thermal Shutdown
          1. 7.3.10.4.1 Thermal Protection in Buck Mode
          2. 7.3.10.4.2 Thermal Protection in Boost Mode
          3. 7.3.10.4.3 Thermal Protection in Battery-only Mode
    4. 7.4 Device Functional Modes
      1. 7.4.1 Host Mode and Default Mode
      2. 7.4.2 Register Bit Reset
    5. 7.5 Programming
      1. 7.5.1 Serial Interface
        1. 7.5.1.1 Data Validity
        2. 7.5.1.2 START and STOP Conditions
        3. 7.5.1.3 Byte Format
        4. 7.5.1.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 7.5.1.5 Target Address and Data Direction Bit
        6. 7.5.1.6 Single Write and Read
        7. 7.5.1.7 Multi-Write and Multi-Read
    6. 7.6 BQ25638 Registers
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inductor Selection
        2. 8.2.2.2 Input Capacitor
        3. 8.2.2.3 Output Capacitor
      3. 8.2.3 Application Curves
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YBG|30
Thermal pad, mechanical data (Package|Pins)
Orderable Information

REGN LDO Power Up

The REGN LDO supplies internal bias circuits as well as the HSFET and LSFET gate drive. The REGN also provides bias rail to TS external resistors. The pull-up rail of STAT can be connected to REGN as well. The REGN is enabled when all the below conditions are valid:

  • VBUS above VVBUS_UVLOZ
  • VBUS above VBAT + VSLEEPZ
  • EN_HIZ = 0
  • After 220-ms delay is completed

If any one of the above conditions is not valid, the REGN LDO and the converter power stage remain off with the converter disabled. In this state, the battery supplies power to the system.