SLPS422B March   2013  – August 2016 CSD97376Q4M

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Application Diagram
      2.      Typical Power Stage Efficiency and Power Loss
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Powering CSD97376Q4M and Gate Drivers
    3. 7.3 Undervoltage Lockout Protection (UVLO)
    4. 7.4 PWM Pin
    5. 7.5 SKIP# Pin
      1. 7.5.1 Zero Crossing (ZX) Operation
    6. 7.6 Integrated Boost-Switch
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Power Loss Curves
    3. 8.3 Safe Operating Curves (SOA)
    4. 8.4 Normalized Curves
    5. 8.5 Calculating Power Loss and SOA
      1. 8.5.1 Design Example
      2. 8.5.2 Calculating Power Loss
      3. 8.5.3 Calculating SOA Adjustments
  9. Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Recommended PCB Design Overview
      2. 9.1.2 Electrical Performance
      3. 9.1.3 Thermal Performance
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Community Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Dimensions
    2. 11.2 Recommended PCB Land Pattern
    3. 11.3 Recommended Stencil Opening

Package Options

Mechanical Data (Package|Pins)
  • DPC|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Integrated Boost-Switch

To maintain a BST-SW voltage close to VDD (to get lower conduction losses on the high-side FET), the conventional diode between the VDD pin and the BST pin is replaced by a FET which is gated by the DRVL signal.