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Product details

Parameters

VDS (V) 30 Power loss (W) 2.2 Ploss current (A) 12 Configuration PowerStage ID, continuous drain current at Ta=25degC (A) 20 Package (mm) SON 3.5x4.5 PowerStage Operating temperature range (C) -40 to 150 open-in-new Find other Power stages

Features

  • 90% System Efficiency at 15 A
  • Max Rated Continuous Current 20 A, Peak 45 A
  • High-Frequency Operation (up to 2 MHz)
  • High-Density SON 3.5-mm x 4.5-mm Footprint
  • Ultra-Low Inductance Package
  • System Optimized PCB Footprint
  • Ultra-Low Quiescent (ULQ) Current Mode
  • 3.3-V and 5-V PWM Signal Compatible
  • Diode Emulation Mode with FCCM
  • Input Voltages up to 24 V
  • Tri-State PWM Input
  • Integrated Bootstrap Diode
  • Shoot-Through Protection
  • RoHS Compliant – Lead-Free Terminal Plating
  • Halogen Free

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Description

The CSD97376Q4M NexFET™ power stage is a highly optimized design for use in a high-power, high-density synchronous buck converter. This product integrates the driver IC and NexFET technology to complete the power stage switching function. The driver IC has a built-in selectable diode emulation function that enables DCM operation to improve light load efficiency. In addition, the driver IC supports ULQ mode that enables Connected Standby for Windows™ 8. With the PWM input in tri-state, quiescent current is reduced to 130 µA with immediate response. When SKIP# is held at tri-state, the current is reduced to 8 µA (typically 20 µs is required to resume switching). This combination produces a high-current, high-efficiency, and high-speed switching device in a small 3.5-mm × 4.5-mm outline package. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design.

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Technical documentation

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Type Title Date
* Datasheet CSD97376Q4M Synchronous Buck NexFET™ Power Stage datasheet (Rev. B) Aug. 15, 2016
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

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