SLVSGV9 august   2023 DRV8213

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Diagrams
    7. 7.7 Typical Operating Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 External Components
    4. 8.4 Feature Description
      1. 8.4.1 Bridge Control
      2. 8.4.2 Current Sense and Regulation (IPROPI)
        1. 8.4.2.1 Current Sensing and Current Mirror Gain Selection
        2. 8.4.2.2 Current Regulation
      3. 8.4.3 Hardware Stall Detection
      4. 8.4.4 Protection Circuits
        1. 8.4.4.1 Overcurrent Protection (OCP)
        2. 8.4.4.2 Thermal Shutdown (TSD)
        3. 8.4.4.3 VM Undervoltage Lockout (UVLO)
    5. 8.5 Device Functional Modes
      1. 8.5.1 Active Mode
      2. 8.5.2 Low-Power Sleep Mode
      3. 8.5.3 Fault Mode
    6. 8.6 Pin Diagrams
      1. 8.6.1 Logic-Level Inputs
      2. 8.6.2 Tri-Level Input
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Brushed DC Motor
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Motor Voltage
          2. 9.2.1.2.2 Motor Current
        3. 9.2.1.3 Stall Detection
          1. 9.2.1.3.1 Detailed Design Procedure
            1. 9.2.1.3.1.1 Hardware Stall Detection Application Description
              1. 9.2.1.3.1.1.1 Hardware Stall Detection Timing
              2. 9.2.1.3.1.1.2 Hardware Stall Threshold Selection
            2. 9.2.1.3.1.2 Software Stall Detection Application Description
              1. 9.2.1.3.1.2.1 Software Stall Detection Timing
              2. 9.2.1.3.1.2.2 Software Stall Threshold Selection
        4. 9.2.1.4 Application Curves
        5. 9.2.1.5 Thermal Performance
          1. 9.2.1.5.1 Steady-State Thermal Performance
          2. 9.2.1.5.2 Transient Thermal Performance
  11. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
  12. 11Layout
    1. 11.1 Layout Guidelines
  13. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11.1 Layout Guidelines

Since the DRV8213 integrates power MOSFETs capable of driving high current, careful attention should be paid to the layout design and external component placement. Some design and layout guidelines are provided below.

  • Low ESR ceramic capacitors should be utilized for the VM to GND bypass capacitor. X5R and X7R types are recommended.
  • The VM power supply capacitors should be placed as close to the device as possible to minimize the loop inductance.
  • The VM power supply bulk capacitor can be of ceramic or electrolytic type, but should also be placed as close as possible to the device to minimize the loop inductance.
  • VM, OUT1, OUT2, and GND carry the high current from the power supply to the outputs and back to ground. Thick metal routing should be utilized for these traces as is feasible.
  • The device thermal pad should be attached to the PCB top layer ground plane and internal ground plane (when available) through thermal vias to maximize the PCB heat sinking.
  • A recommended land pattern for the thermal vias is provided in the package drawing section.
  • The copper plane area attached to the thermal pad should be maximized to ensure optimal heat sinking.