SLVSCC0D November 2013 – October 2019 DRV8850
An internal charge pump generates a voltage greater than VCC that is used to drive the internal N-channel power MOSFETs. The charge pump requires a capacitor between the VCP and VCC pins. TI recommends bypassing VCC to ground with 0.1-μF and 10-μF ceramic capacitors, placing them as close as possible to the IC. Each input pin has a weak pulldown resistor to ground (see Electrical Characteristics for more details).
The input pins should not be driven to more than 0.6 V without the VCC power supply removed.