SBOS950A July   2019  – January 2021 INA253-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Shunt Resistor
      2. 7.3.2 Short-Circuit Duration
      3. 7.3.3 Temperature Stability
      4. 7.3.4 Enhanced PWM Rejection Operation
      5. 7.3.5 Input Signal Bandwidth
    4. 7.4 Device Functional Modes
      1. 7.4.1 Adjusting the Output Midpoint With the Reference Pins
      2. 7.4.2 Reference Pin Connections for Unidirectional Current Measurements
      3. 7.4.3 Ground Referenced Output
      4. 7.4.4 Reference Pin Connections for Bidirectional Current Measurements
        1. 7.4.4.1 Output Set to External Reference Voltage
      5. 7.4.5 Output Set to Mid-Supply Voltage
      6. 7.4.6 Output Set to Mid-External Reference
      7. 7.4.7 Output Set Using Resistor Divide
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input Filtering
    2. 8.2 Typical Applications
      1. 8.2.1 High-Side, High-Drive, Solenoid Current-Sense Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Speaker Enhancements and Diagnostics Using Current Sense Amplifier
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

at TA = 25 °C, VS = 5 V, ISENSE = IS+ = 0 A, VCM = 12 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT
VCMCommon-mode input rangeVIN+ = –4 V to +80 V, ISENSE = 0 A,
TA = –40 °C to +125 °C		–480V
CMRCommon-mode rejectionVIN+ = –4 V to +80 V, ISENSE = 0 A,
TA = –40 °C to +125 °C		±125±500µA/V
f = 50 kHz±13mA/V
IOSOffset current, input-referredISENSE = 0 A±2.5±15mA
dIOS/dTOffset current driftISENSE = 0 A, TA = –40 °C to +125 °C25125µA/°C
PSRRPower-supply rejection ratioVS = 2.7 V to 5.5 V, ISENSE = 0 A±0.5±5mA/V
IBInput bias currentIB+, IB–, ISENSE = 0 A90µA
Reference input range0VSV
SHUNT RESISTOR
RSHUNTShunt resistance (SH+ to SH–)Equivalent resistance when used with onboard amplifier1.99822.002mΩ
Used as stand-alone resistor(1)1.922.1
Package resistanceIS+ to IS–4.5mΩ
Package inductanceIS+ to IS–3nH
Resistor temperature coefficientTA = –40 °C to +125 °C15ppm/°C
TA = –40 °C to 0 °C50
TA = 0 °C to 125 °C10
ISENSEMaximum continuous current(2)TA = –40 °C to +85 °C±15A
Shunt short time overloadISENSE = 30 A for 5 seconds±0.05%
Shunt thermal shock–65 °C to +150°C, 500 cycles±0.1%
Shunt resistance to solder heat260 °C solder, 10 seconds±0.1%
Shunt high temperature exposure1000 hours, TA = 150 °C±0.15%
Shunt cold temperature storage24 hours, TA = –65 °C±0.025%
OUTPUT
GGainINA253A1100mV/A
INA253A2200
INA253A3400
System gain error(3)GND + 50 mV ≤ VOUT ≤ VS – 200 mV, 
TA = 25 °C		±0.05%±0.4%
TA = –40 °C to +125 °C±45ppm/°C
Nonlinearity errorGND + 10 mV ≤ VOUT ≤ VS – 200 mV±0.01%
Reference divider accuracyVOUT = |(VREF1 – VREF2)| / 2 at ISENSE = 0 A, 
TA = –40 °C to +125 °C		0.02%0.1%
RVRRReference voltage rejection ratio (input-referred)INA253A22.5mA/V
INA253A1, INA253A31
Maximum capacitive loadNo sustained oscillation1nF
VOLTAGE OUTPUT
Swing to VS power-supply railRL = 10 kΩ to GND, TA = –40 °C to +125 °CVS – 0.05VS – 0.2V
Swing to GNDRL = 10 kΩ to GND, ISENSE = 0 A,
VREF1 = VREF2 = 0 V, TA = –40 °C to +125 °C		VGND + 1VGND + 10mV
FREQUENCY RESPONSE
BWBandwidth(4)All gains, –3-dB bandwidth350kHz
All gains, 2% THD+N(4)100
Output settling timeSettles to 0.5% of final value10µs
SRSlew rate2.4V/µs
NOISE (Input Referred)
Voltage noise density40nV/√ Hz
POWER SUPPLY
IQQuiescent currentISENSE = 0 A1.82.4mA
TA = –40 °C to +125 °C 2.6
(1) The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See the Integrated Shunt Resistor section for more information.
(2) See Maximum Continuous Current for additional information on the current derating and review layout section recommendations to improve the current handling capability of the device at higher temperatures.
(3) System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical Characteristics table.
(4) See Bandwidth section for more details.