SNVS859C July   2012  – September 2016 LM25101

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Options
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Start-Up and UVLO
      2. 8.3.2 Level Shift
      3. 8.3.3 Output Stages
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting External Gate Driver Resistor
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Independent High and Low Driver Logic Inputs
  • Bootstrap Supply Voltage up to 100-V DC
  • Drives Both a High-Side and Low-Side N-Channel MOSFETs
  • Fast Propagation Times (25 ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (3 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100 and HIP2101

2 Applications

  • Motor-Controlled Drivers
  • Half and Full Bridge Power Converters
  • Synchronous Buck Converters
  • Two Switch Forward Power Converters
  • Forward With Active Clamp Converters
  • 48-V Server Power
  • Solar DC-DC and DC-AC Converters

3 Description

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.

These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
LM25101 MSOP PowerPAD (8) 3 mm × 3 mm
WSON (8) 4 mm × 4 mm
WSON (10) 4 mm × 4 mm
SO PowerPAD (8) 3.9 mm × 4.89 mm
SOIC (8) 3.91 mm × 4.9 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Application Diagram

LM25101 application_SNVS859.gif