The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.
These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.
|Part number||Order||Number of channels (#)||Power switch||Bus voltage (Max) (V)||Peak output current (A)||Input VCC (Min) (V)||Input VCC (Max) (V)||Rise time (ns)||Fall time (ns)||Prop delay (ns)||Iq (uA)||Input threshold||Channel input logic||Negative voltage handling at HS pin (V)||Features||Rating||Operating temperature range (C)||Package Group|
||2||MOSFET||100||3||9||14||8||8||22||10||TTL||TTL||-1||Catalog||-40 to 125||
HVSSOP | 8
SO PowerPAD | 8
SOIC | 8
WSON | 10
WSON | 8