The device is capable of operating at a wide temperature range including high junction temperature up to 150°C. It is designed to meet or exceed AEC-Q100 grade 1 specifications by accommodating additional IC junction temperature rise while operating at 125°C ambient temperature. The electrical specifications of the device is fully characterized between TJ of -40°C to 150°C to support automotive and other high junction temperature applications. Extended reliability test data beyond AEC-Q100 grade 1 specification is also available upon request.
The device is capable of supporting product lifetime operation temperature profiles typical to many automotive applications. Table 10-1 shows an example of an application with 19340 POH at an input bias voltage of 60 V. The life span of a semiconductor device is a function of bias conditions, operating temperatures, and power-on time. Extended operation at high junction temperature degrades the product total power-on hours.
|JUNCTION TEMPERATURE||POWER-ON HOURS||DISTRIBUTION||OPERATING CONDITIONS|
|-15°C||720 Hours||3.7 %||
BIAS = 60V
Ea = 0.7eV
|48°C||6300 Hours||32.6 %|
|101°C||11000 Hours||56.9 %|
|145°C||1200 Hours||6.2 %|