SBOS566C June   2017  – October 2018 OPA1692

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Preamplifier for 3-Wire Electret Microphones
      2.      THD + N vs Frequency (3 VRMS, 2-kΩ Load)
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions: OPA1692
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: OPA1692
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Distortion Reduction
      2. 7.3.2 Phase Reversal Protection
      3. 7.3.3 Electrical Overstress
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operating Voltage
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Capacitive Loads
      2. 8.1.2 Noise Performance
      3. 8.1.3 Basic Noise Calculations
      4. 8.1.4 EMI Rejection
      5. 8.1.5 EMIRR +IN Test Configuration
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Other Application Examples
      1. 8.3.1 Two-Wire Electret Microphone Preamplifier
      2. 8.3.2 Battery-Powered Preamplifier for Professional Microphones
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 TINA-TI™ (Free Software Download)
        2. 11.1.1.2 DIP Adapter EVM
        3. 11.1.1.3 Universal Operational Amplifier EVM
        4. 11.1.1.4 Smart Amplifier Speaker Characterization Board Evaluation Module
        5. 11.1.1.5 TI Precision Designs
        6. 11.1.1.6 WEBENCH Filter Designer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Community Resource
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

EMI Rejection

The electromagnetic interference (EMI) rejection ratio, or EMIRR, describes the EMI immunity of operational amplifiers. An adverse effect that is common to many op amps is a change in the offset voltage as a result of RF signal rectification. An op amp that is more efficient at rejecting this change in offset as a result of EMI has a higher EMIRR and is quantified by a decibel value. Measuring EMIRR can be performed in many ways, but this section provides the EMIRR IN+, which specifically describes the EMIRR performance when the RF signal is applied to the noninverting input pin of the op amp. In general, only the noninverting input is tested for EMIRR for the following three reasons:

  • Op amp input pins are known to be the most sensitive to EMI, and typically rectify RF signals better than the supply or output pins.
  • The noninverting and inverting op amp inputs have symmetrical physical layouts and exhibit approximately matching EMIRR performance
  • EMIRR is easier to measure on noninverting pins than on other pins because the noninverting input pin can be isolated on a PCB. This isolation allows the RF signal to be applied directly to the noninverting input terminal with no complex interactions from other components or connecting PCB traces.

High-frequency signals conducted or radiated to any pin of the operational amplifier result in adverse effects, as the amplifier does not have sufficient loop gain to correct for signals with spectral content outside its bandwidth. Conducted or radiated EMI on inputs, power supply, or output may result in unexpected DC offsets, transient voltages, or other unknown behavior. Take care to properly shield and isolate sensitive analog nodes from noisy radio signals and digital clocks and interfaces.

The EMIRR IN+ of the OPA169x amplifiers is plotted versus frequency as shown in Figure 58. If available, any dual and quad op amp device versions have nearly similar EMIRR IN+ performance. The OPA169x unity-gain bandwidth is 5.1 MHz. EMIRR performance below this frequency denotes interfering signals that fall within the op amp bandwidth.

See EMI Rejection Ratio of Operational Amplifiers, available for download from www.ti.com.

OPA1692 D030_SBOS566.gifFigure 58. OPA169x EMIRR IN+

Table 1 lists the EMIRR IN+ values for the OPA169x at particular frequencies commonly encountered in real-world applications. Applications listed in Table 1 may be centered on or operated near the particular frequency shown. This information may be of special interest to designers working with these types of applications, or working in other fields likely to encounter RF interference from broad sources, such as the industrial, scientific, and medical (ISM) radio band.

Table 1. OPA169x EMIRR IN+ for Frequencies of Interest

FREQUENCY APPLICATION OR ALLOCATION EMIRR IN+
400 MHz Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF) applications 45.9 dB
900 MHz Global system for mobile communications (GSM) applications, radio communication, navigation, GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF applications 50.2 dB
1.8 GHz GSM applications, mobile personal communications, broadband, satellite, L-band (1 GHz to 2 GHz) 70.7 dB
2.4 GHz 802.11b, 802.11g, 802.11n, Bluetooth®, mobile personal communications, industrial, scientific and medical (ISM) radio band, amateur radio and satellite, S-band (2 GHz to 4 GHz) 76.1 dB
3.6 GHz Radiolocation, aero communication and navigation, satellite, mobile, S-band 94.1 dB
5 GHz 802.11a, 802.11n, aero communication and navigation, mobile communication, space and satellite operation, C-band (4 GHz to 8 GHz) 104.5 dB