SBOS875C August   2017  – February 2023 THS3491

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Bare Die Information
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics: VS = ±15 V
    6. 8.6 Electrical Characteristics: VS = ±7.5 V
    7. 8.7 Typical Characteristics: ±15 V
    8. 8.8 Typical Characteristics: ±7.5 V
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Power-Down (PD) Pin
      2. 9.3.2 Power-Down Reference (REF) Pin
      3. 9.3.3 Internal Junction Temperature Sense (TJ_SENSE) Pin
    4. 9.4 Device Functional Modes
      1. 9.4.1 Wideband Noninverting Operation
      2. 9.4.2 Wideband, Inverting Operation
      3. 9.4.3 Single-Supply Operation
      4. 9.4.4 Maximum Recommended Output Voltage
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Driving Capacitive Loads
      2. 10.1.2 Video Distribution
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
        1. 10.4.1.1 PowerPAD™ Integrated Circuit Package Design Considerations (DDA Package Only)
          1. 10.4.1.1.1 PowerPAD™ Integrated Circuit Package Layout Considerations
          2. 10.4.1.1.2 Power Dissipation and Thermal Considerations
      2. 10.4.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.8 Typical Characteristics: ±7.5 V

at +VS = 7.5 V, –VS = –7.5 V, TA ≅ 25°C, RLOAD = 100 Ω to midsupply, noninverting gain (G) = 5 V/V  RGT package: RF = 576 Ω, RG = 143 Ω, or DDA package: RF = 798 Ω, RG = 200 Ω (unless otherwise noted)

GUID-11D33EFA-73DC-4FBD-8F5D-5FC438578C9C-low.gif
VO = 2 VPP
Figure 8-42 Noninverting Small-Signal Frequency Response
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VO = 2 VPP
Figure 8-44 HD2 vs Frequency
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Figure 8-46 HD2 vs Frequency Across Output Swing
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Figure 8-48 HD2 vs Output Swing
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VO = 2 VPPRLOAD = 1 kΩ
Figure 8-50 Harmonic Distortion vs Frequency
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±100-kHz frequency spacing
Figure 8-52 IMD2 vs Output Voltage Swing
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VO = 5 VPP
Figure 8-54 G = 5 V/V Pulse Response
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VO = 5 VPP
Figure 8-56 G = –5 V/V Pulse Response
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Figure 8-58 Overdrive Recovery Time
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Flash tested to keep TJ as close to TA as possible
Figure 8-60 Input Offset Voltage Over Temperature
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VO = 2 VPP
Figure 8-43 Inverting Small-Signal Frequency Response
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VO = 2 VPP
Figure 8-45 HD3 vs Frequency
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Figure 8-47 HD3 vs Frequency Across Output Swing
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Figure 8-49 HD3 vs Output Swing
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VO = 2.5 VPP per tone±100-kHz frequency spacing
Figure 8-51 Intermodulation Distortion vs Frequency
GUID-EEBBFC6C-D42D-431F-8867-58D14D3A6C6A-low.gif
±100-kHz frequency spacing
Figure 8-53 IMD3 vs Output Voltage Swing
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VO = 10 VPP
Figure 8-55 G = 5 V/V Pulse Response
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VO = 10 VPP
Figure 8-57 G = –5 V/V Pulse Response
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Measured with devices soldered on TI EVM. Devices not turned off at any read points but load applied for a few msec to measure VOUT and then removed.
Figure 8-59 Output Voltage Swing vs Output Current