SLOS154C December   1995  – July 2025 TLC27L1 , TLC27L1A

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Dissipation Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Electrical Characteristics, C Suffix
    5. 5.5  Operating Characteristics, VDD = 5V, C Suffix
    6. 5.6  Operating Characteristics, VDD = 10V, C Suffix
    7. 5.7  Electrical Characteristics, I Suffix
    8. 5.8  Operating Characteristics, VDD = 5V, I Suffix
    9. 5.9  Operating Characteristics, VDD = 10V, I Suffix
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Single-Supply Versus Split-Supply Test Circuits
    2. 6.2 Input Bias Current
    3. 6.3 Low-Level Output Voltage
    4. 6.4 Input Offset Voltage Temperature Coefficient
    5. 6.5 Full-Power Response
    6. 6.6 Test Time
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Single-Supply Operation
      2. 7.1.2 Input Characteristics
      3. 7.1.3 Noise Performance
      4. 7.1.4 Feedback
      5. 7.1.5 Electrostatic Discharge Protection
      6. 7.1.6 Latch-Up
      7. 7.1.7 Output Characteristics
      8. 7.1.8 Typical Applications
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1.5 Electrostatic Discharge Protection

The TLC27L1 incorporates an internal electrostatic-discharge (ESD) protection circuit that prevents functional failures at voltages up to 2000V as tested under MIL-STD-883C, Method 3015.2. However, exercise care when handling these devices as exposure to ESD potentially results in the degradation of the device parametric performance. The protection circuit also causes the input bias currents to be temperature dependent and have the characteristics of a reverse-biased diode.