SLVSJD7 February   1997  – July 2025 TLE2021 , TLE2021A , TLE2021M , TLE2022 , TLE2022A , TLE2022AM , TLE2022M , TLE2024 , TLE2024A , TLE2024B , TLE2024BM

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Tables
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  Recommended Operating Conditions
    3. 6.3  Thermal Information for TLE2021
    4. 6.4  Thermal Information for TLE2022
    5. 6.5  Thermal Information for TLE2024
    6. 6.6  Electrical Characteristics for TLE2021, VCC = ±15V
    7. 6.7  Electrical Characteristics for TLE2021, VCC = 5V
    8. 6.8  Electrical Characteristics for TLE2022, VCC = ±15V
    9. 6.9  Electrical Characteristics for TLE2022, VCC = 5V
    10. 6.10 Electrical Characteristics for TLE2024, VCC = ±15V
    11. 6.11 Electrical Characteristics for TLE2024, VCC = 5V
    12. 6.12 Typical Characteristics
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Voltage-Follower Applications
      2. 7.1.2 Input Offset Voltage Null
    2. 7.2 Layout
      1. 7.2.1 Layout Guidelines
      2. 7.2.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The TLE2021, TLE2022, and TLE2024 (TLE202x) devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments state-of-the art bipolar process. These devices combine the best features of the OP21, with a highly improved slew rate and unity-gain bandwidth.

The complementary bipolar process uses isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. Therefore, a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices an excellent choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs is less than the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to +85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to +125°C.

Device Information
PART NUMBER(1) CHANNEL COUNT PACKAGE(2)
TLE2021 Single D (SOIC, 8)
P (PDIP, 8)
TLE2022 Dual D (SOIC, 8)
P (PDIP, 8)
TLE2024 Quad DW (SOIC, 16)
N (PDIP, 14)
(1) See Section 4.
(2) For more information, see Section 10.
TLE2021 TLE2021A TLE2021M TLE2022 TLE2022A TLE2022AM TLE2022B TLE2022M TLE2024 TLE2024A TLE2024B TLE2024BM Difference Amplifier Circuit With the RES11A Difference Amplifier Circuit With the RES11A