– February 2018
TLV2460A-Q1 , TLV2461A-Q1 , TLV2462-Q1 , TLV2462A-Q1 , TLV2463A-Q1 , TLV2464A-Q1
Refer to the PDF data sheet for device specific package drawings
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.