SLVSEG3E September 2019 – March 2022 TPS25840-Q1 , TPS25842-Q1
PRODUCTION DATA
Unless otherwise specified the following conditions apply: VIN = 13.5 V, fSW = 400 kHz, L = 10 µH, COUT_CSP = 66 µF, COUT_CSN = 0.1 µF, CBUS = 1 µF, TA = 25 °C.

| VCSN = 8 V | INT = 5.1 kΩ | ||
Figure 8-3 Precision Enable Threshold
Figure 8-5 VCC vs Input Voltage
Figure 8-7 High-side Current Limit vs Input Voltage
Figure 8-9 Low-side MOSFET on Resistance vs Junction Temperature
| RT = 8.87 kΩ |

| RSNS = 15 mΩ | RSET = 300 Ω |

| VCSN/OUT = 5.1 V | RIMON = 0 kΩ |

| RSNS = 15 mΩ | RSET = 300 Ω | RIMON = 13 kΩ |
Figure 8-19 DP_IN Overvoltage Protection Threshold vs Junction Temperature
| Measured source with 10-cm cable |
Figure 8-23 Data Transmission Characteristics vs Frequency
Figure 8-25 On-state Cross-channel
Isolation vs Frequency
| EN = 0 V |
Figure 8-4 VIN UVLO Threshold
| RIMON = 0 Ω |
Figure 8-8 High-side MOSFET on Resistance vs Junction Temperature
| RT = 49.9 kΩ |

| RSNS = 15 mΩ | RSET = 300 Ω |
Figure 8-14 LS_GD Gate Source Current vs Junction Temperature
| RSNS = 15 mΩ | RSET = 300 Ω | RIMON = 13 kΩ |
Figure 8-18 VBUS Overvoltage Protection Threshold vs Junction Temperature
Figure 8-20 DM_IN Overvoltage Protection Threshold vs Junction Temperature
| Measured on TPS25830-Q1 EVM with 10-cm cable |
Figure 8-24 Off-state Data-Switch
Isolation vs Frequency