SBVS038X September 2003 – May 2025 TPS736
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VIN | Input voltage range(1)(2) | 1.7 | 5.5 | V | |||
| VFB | Internal reference (TPS73601) | TJ = 25°C | 1.198 | 1.204 | 1.210 | V | |
| VOUT | Output voltage range (TPS73601)(3) | VFB | 5.5 - VDO | V | |||
| Accuracy(1)(4) | Nominal | TJ = 25°C | –0.5 | 0.5 | % | ||
| over VIN, IOUT, and T | VOUT + 0.5V ≤ VIN ≤ 5.5V; 10mA ≤ IOUT ≤ 400mA | –1 | ±0.5 | 1 | |||
| ΔVOUT(ΔVIN) | Line regulation (1) | VOUT(nom) + 0.5V ≤ VIN ≤ 5.5V | 0.01 | %/V | |||
| ΔVOUT(ΔIOUT) | Load regulation | 1mA ≤ IOUT ≤ 400mA | 0.002 | %/mA | |||
| 10mA ≤ IOUT ≤ 400mA | 0.0005 | ||||||
| VDO | Dropout voltage(5) (VIN = VOUT(nom) - 0.1V) | IOUT = 400mA | 75 | 200 | mV | ||
| ZO(DO) | Output impedance in dropout | 1.7V ≤ VIN ≤ VOUT + VDO | 0.25 | Ω | |||
| ICL | Output current limit | VOUT = 0.9 × VOUT(nom) | legacy silicon | 400 | 650 | 800 | mA |
| 3.6V ≤ VIN ≤ 4.2V, 0℃ ≤ TJ ≤ 70℃ | 500 | 800 | |||||
| VOUT = 0.9 × VOUT(nom) | new silicon | 500 | 800 | ||||
| ISC | Short-circuit current | VOUT = 0V | 450 | mA | |||
| IREV | Reverse leakage current(6) (-IIN) | VEN ≤ 0.5V, 0V ≤ VIN ≤ VOUT | 0.1 | 10 | µA | ||
| IGND | Ground pin current | IOUT = 10mA (IQ), legacy silicon | 400 | 550 | µA | ||
| IOUT = 10mA (IQ), new silicon | 400 | 630 | |||||
| IGND | Ground pin current | IOUT = 400mA | 800 | 1000 | µA | ||
| ISHDN | Shutdown current (IGND) | VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5V, –40°C ≤ TJ ≤ 100℃, legacy silicon | 0.02 | 1 | µA | ||
| VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5V, new silicon | 0.02 | 1 | |||||
| IFB | Feedback pin current (TPS73601) | 0.1 | 0.3 | µA | |||
| PSRR | Power-supply rejection ratio (ripple rejection) | f = 100Hz, IOUT = 400mA | 58 | dB | |||
| f = 10kHz, IOUT = 400mA | 37 | ||||||
| VN | Output noise voltage, BW = 10Hz to 100kHz | COUT = 10µF, no CNR | 27 × VOUT | µVRMS | |||
| COUT = 10µF, CNR =0.01µF | 8.5 × VOUT | ||||||
| tSTR | Startup time | VOUT = 3V, RL = 30Ω, COUT = 1μF, CNR = 0.01μF | 600 | µs | |||
| VEN(high) | EN pin high (enabled) | 1.7 | VIN | V | |||
| VEN(low) | EN pin low (shutdown) | 0 | 0.5 | V | |||
| IEN(high) | Enable pin current (enabled) | VEN = 5.5V | 0.02 | 0.1 | µA | ||
| TSD | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | |||
| Reset, temperature decreasing | 140 | ||||||
| TJ | Operating junction temperature | –40 | 125 | ℃ | |||