SLUSEP8 January   2022 TPSM5D1806E

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics (VIN = 12 V)
    7. 6.7 Typical Characteristics (VIN = 5 V)
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Adjustable Output Voltage
      2. 7.3.2  Frequency Selection
        1. 7.3.2.1 Synchronization
        2. 7.3.2.2 Allowable Switching Frequency
      3. 7.3.3  Minimum and Maximum Input Voltage
      4. 7.3.4  Recommended Settings
      5. 7.3.5  Device Mode Configuration
        1. 7.3.5.1 MODE1 (Operating Mode and Phase Position)
        2. 7.3.5.2 MODE2 (Setting the Switching Frequency)
      6. 7.3.6  Input Capacitors
      7. 7.3.7  Minimum Required Output Capacitance
      8. 7.3.8  Ambient Temperature Versus Total Power Dissipation
      9. 7.3.9  Remote Sense
      10. 7.3.10 Enable (EN) and Undervoltage Lockout (UVLO)
      11. 7.3.11 Soft Start
      12. 7.3.12 Power Good
      13. 7.3.13 Safe Start-Up into Pre-Biased Outputs
      14. 7.3.14 BP5
      15. 7.3.15 Overcurrent Protection
      16. 7.3.16 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Active Mode
      2. 7.4.2 Shutdown Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application (Dual Outputs)
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Output Voltage Setpoint
        3. 8.2.2.3 Input Capacitors
        4. 8.2.2.4 Output Capacitor Selection
      3. 8.2.3 Application Curves
      4. 8.2.4 Typical Application (Paralleled Outputs)
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
          1. 8.2.4.2.1 Output Voltage Setpoint
          2. 8.2.4.2.2 Input Capacitors
          3. 8.2.4.2.3 Output Capacitor Selection
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
      1. 10.2.1 Package Specifications
      2. 10.2.2 EMI
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design With WEBENCH® Tools
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) TPSM5D1806 UNIT
RDB (QFN)
51 PINS
RθJA Junction-to-ambient thermal resistance (2) 13.9 °C/W
ΨJT Junction-to-top characterization parameter (3) 1.8 °C/W
ΨJB Junction-to-board characterization parameter (4) 9.4 °C/W
TSHDN Thermal Shutdown Temperature 165 °C
TSHDN Thermal Shutdown Hysteresis 20 °C
(1) For more information about thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The junction-to-ambient thermal resistance, RθJA, applies to devices soldered directly to a 100 mm × 100 mm, 6-layer PCB with 2 oz. copper and natural convection cooling. Additional airflow reduces RθJA.
(3) The junction-to-top characterization parameter, ψJT, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (section 6 and 7). TJ = ψJT × Pdis + TT; where Pdis is the power dissipated in the device and TT is the temperature of the top of the device.
(4) The junction-to-board characterization parameter, ψJB, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (sections 6 and 7). TJ = ψJB × Pdis + TB; where Pdis is the power dissipated in the device and TB is the temperature of the board 1 mm from the device.