SLUSDE1D November   2018  – February 2021 UCC21540 , UCC21540A , UCC21541 , UCC21542

PRODMIX  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     UCC21540, UCC21541 Pin Functions
    2.     UCC21542 Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety-Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Minimum Pulses
    2. 8.2 Propagation Delay and Pulse Width Distortion
    3. 8.3 Rising and Falling Time
    4. 8.4 Input and Disable Response Time
    5. 8.5 Programmable Dead Time
    6. 8.6 Power-up UVLO Delay to OUTPUT
    7. 8.7 CMTI Testing
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD, VCCI, and Under Voltage Lock Out (UVLO)
      2. 9.3.2 Input and Output Logic Table
      3. 9.3.3 Input Stage
      4. 9.3.4 Output Stage
      5. 9.3.5 Diode Structure in the UCC2154x
    4. 9.4 Device Functional Modes
      1. 9.4.1 Disable Pin
      2. 9.4.2 Programmable Dead Time (DT) Pin
        1. 9.4.2.1 DT Pin Tied to VCCI
        2. 9.4.2.2 Connecting a Programming Resistor between DT and GND Pins
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing INA/INB Input Filter
        2. 10.2.2.2 Select Dead Time Resistor and Capacitor
        3. 10.2.2.3 Select External Bootstrap Diode and its Series Resistor
        4. 10.2.2.4 Gate Driver Output Resistor
        5. 10.2.2.5 Gate to Source Resistor Selection
        6. 10.2.2.6 Estimating Gate Driver Power Loss
        7. 10.2.2.7 Estimating Junction Temperature
        8. 10.2.2.8 Selecting VCCI, VDDA/B Capacitor
          1. 10.2.2.8.1 Selecting a VCCI Capacitor
          2. 10.2.2.8.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 10.2.2.8.3 Select a VDDB Capacitor
        9. 10.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Component Placement Considerations
      2. 12.1.2 Grounding Considerations
      3. 12.1.3 High-Voltage Considerations
      4. 12.1.4 Thermal Considerations
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DWK|14
  • DW|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12.2 Layout Example

Figure 12-1 shows a 2-layer PCB layout example with the signals and key components labeled for the SOIC-14 DW package, which has Pin 12 and Pin 13 removed. For more detailed information, please refer to the UCC21540EVM design - "Using the UCC21540EVM - TI"

GUID-402A6654-E9CE-4FBA-A034-0E3B827B4E9A-low.pngFigure 12-1 Layout Example

Figure 12-2 and Figure 12-3 shows top and bottom layer traces and copper.

Note:

There are no PCB traces or copper between the primary and secondary side, which ensures isolation performance.

PCB traces between the high-side and low-side gate drivers in the output stage are increased to maximize the creepage distance for high-voltage operation, which will also minimize cross-talk between the switching node VSSA (SW), where high dv/dt may exist, and the low-side gate drive due to the parasitic capacitance coupling.

GUID-F5C60C28-462E-428F-AA8A-4347F546D4BE-low.pngFigure 12-2 Top Layer Traces and Copper
GUID-A8778D40-F5BC-441D-B6F4-6AE8D593EEB6-low.gifFigure 12-3 Bottom Layer Traces and Copper (Flipped)

Figure 12-4 and Figure 12-5 are 3-D layout pictures with top view and bottom views.

Note:

The location of the PCB cutout between the primary side and secondary sides, which ensures isolation performance.

GUID-1F88D074-709E-423E-8297-B0D5AC0563CA-low.gifFigure 12-4 3-D PCB Top View
GUID-83FD2896-C16B-4EF5-A4AA-49D11D30A708-low.gifFigure 12-5 3-D PCB Bottom View