SLUSBF3D July   2013  – March 2018 UCC28740

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Application Diagram
      2.      Typical V-I Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Detailed Pin Description
      2. 7.3.2 Valley-Switching and Valley-Skipping
      3. 7.3.3 Startup Operation
      4. 7.3.4 Fault Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Secondary-Side Optically Coupled Constant-Voltage (CV) Regulation
      2. 7.4.2 Primary-Side Constant-Current (CC) Regulation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Standby Power Estimate and No-Load Switching Frequency
        3. 8.2.2.3 Input Bulk Capacitance and Minimum Bulk Voltage
        4. 8.2.2.4 Transformer Turns-Ratio, Inductance, Primary Peak Current
        5. 8.2.2.5 Transformer Parameter Verification
        6. 8.2.2.6 VS Resistor Divider, Line Compensation
        7. 8.2.2.7 Output Capacitance
        8. 8.2.2.8 VDD Capacitance, CVDD
        9. 8.2.2.9 Feedback Network Biasing
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 VDD Pin
      2. 10.1.2 VS Pin
      3. 10.1.3 FB Pin
      4. 10.1.4 GND Pin
      5. 10.1.5 CS Pin
      6. 10.1.6 DRV Pin
      7. 10.1.7 HV Pin
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Custom Design With WEBENCH® Tools
      2. 11.1.2 Device Nomenclature
        1. 11.1.2.1  Capacitance Terms in Farads
        2. 11.1.2.2  Duty Cycle Terms
        3. 11.1.2.3  Frequency Terms in Hertz
        4. 11.1.2.4  Current Terms in Amperes
        5. 11.1.2.5  Current and Voltage Scaling Terms
        6. 11.1.2.6  Transformer Terms
        7. 11.1.2.7  Power Terms in Watts
        8. 11.1.2.8  Resistance Terms in Ohms
        9. 11.1.2.9  Timing Terms in Seconds
        10. 11.1.2.10 Voltage Terms in Volts
        11. 11.1.2.11 AC Voltage Terms in VRMS
        12. 11.1.2.12 Efficiency Terms
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2.5 Transformer Parameter Verification

Because the selected transformer turns-ratio affects the MOSFET VDS and the secondary and auxiliary rectifier reverse voltages, a review of these voltages is important. In addition, internal timing constraints of the UCC28740 require a minimum on time of the MOSFET (tON) and a minimum demagnetization time (tDM) of the transformer in the high-line minimum-load condition. The selection of fMAX, LP, and RCS affects the minimum tON and tDM.

Equation 18 and Equation 19 determine the reverse voltage stresses on the secondary and auxiliary rectifiers. Stray inductance can impress additional voltage spikes upon these stresses and snubbers may be necessary.

Equation 18. UCC28740 q_Vrevs_lusbf3.gif
Equation 19. UCC28740 q_Vreva_lusbf3.gif

For the MOSFET VDS peak voltage stress, an estimated leakage inductance voltage spike (VLK) is included.

Equation 20. UCC28740 q_dp_Vdspk_lusb41.gif

Equation 21 determines if tON(min) exceeds the minimum tON target of 280 ns (maximum tCSLEB). Equation 22 verifies that tDM(min) exceeds the minimum tDM target of 1.2 µs.

Equation 21. UCC28740 q_tonmin_lusbf3.gif
Equation 22. UCC28740 q_tdmmin_lusbf3.gif