SLVSJ11 August   2025 UCC57132 , UCC57138

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Enable/Fault (EN/FLT)
      3. 6.3.3 Driver Stage
      4. 6.3.4 Overcurrent (OC) Protection
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
  8. 7  Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Driving MOSFET/IGBT/SiC MOSFET
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 VDD Undervoltage Lockout
          2. 7.2.1.2.2 Power Dissipation
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Thermal Consideration
  9. 8 Device and Documentation Support
    1. 8.1 Third-Party Products Disclaimer
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) UCC5713x  UNIT
D
8 PINS
RθJA Junction-to-ambient thermal resistance 126.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 67.1 °C/W
RθJB Junction-to-board thermal resistance 75.8 °C/W
ΨJT Junction-to-top characterization parameter 15.9 °C/W
ΨJB Junction-to-board characterization parameter 74.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance na °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.