JAJSPL3 January   2023 BQ21080

PRODUCTION DATA  

  1. 特長
  2. アプリケーション
  3. 概要
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Battery Charging Process
        1. 8.1.1.1 Trickle Charge
        2. 8.1.1.2 Precharge
        3. 8.1.1.3 Fast Charge
        4. 8.1.1.4 Termination
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Based Dynamic Power Management (VINDPM)
      2. 8.3.2  Dynamic Power Path Management Mode (DPPM)
      3. 8.3.3  Battery Supplement Mode
      4. 8.3.4  SYS Power Control (SYS_MODE bit control)
        1. 8.3.4.1 SYS Pulldown Control
      5. 8.3.5  SYS Regulation
      6. 8.3.6  ILIM Control
      7. 8.3.7  Protection Mechanisms
        1. 8.3.7.1 Input Overvoltage Protection
        2. 8.3.7.2 Battery Undervoltage Lockout
        3. 8.3.7.3 System Overvoltage Protection
        4. 8.3.7.4 System Short Protection
        5. 8.3.7.5 Battery Overcurrent Protection
        6. 8.3.7.6 Safety Timer and Watchdog Timer
        7. 8.3.7.7 Thermal Protection and Thermal Regulation
      8. 8.3.8  Pushbutton Wake and Reset Input
        1. 8.3.8.1 Pushbutton Wake or Short Button Press Functions
        2. 8.3.8.2 Pushbutton Reset or Long Button Press Functions
      9. 8.3.9  15-Second Timeout for HW Reset
      10. 8.3.10 Hardware Reset
      11. 8.3.11 Software Reset
      12. 8.3.12 Interrupt Indicator (/INT) Pin
      13. 8.3.13 External NTC Monitoring (TS)
        1. 8.3.13.1 TS Biasing and Function
      14. 8.3.14 I2C Interface
        1. 8.3.14.1 F/S Mode Protocol
    4. 8.4 Device Functional Modes
    5. 8.5 Register Maps
      1. 8.5.1 I2C レジスタ
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input (IN/SYS) Capacitors
        2. 9.2.2.2 TS
        3. 9.2.2.3 Recommended Passive Components
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 サード・パーティ製品に関する免責事項
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 用語集
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Thermal Protection and Thermal Regulation

During operation, to protect the device from damage due to overheating, the junction temperature of the die, TJ, is monitored. When TJ reaches TSHUT_RISING, the device stops charging operation and VSYS is shutdown. If in the case where TJ > TSHUT_RISING prior to power being applied to the device (either battery or adapter), the input FET or BATFET will not turn ON, regardless of the TSMR pin. Thereafter if temperature falls below TSHUT_FALLING, the device will automatically power up if VIN is present or if in battery only mode.

During the charging process, to prevent overheating in the device, the device monitors the junction temperature of the die and reduces the charging current once TJ reaches the thermal regulation threshold (TREG) based on bits set by the THERM_REG setting. If the charge current is reduced to 0, the battery supplies the current needed to supply the SYS output. Thermal regulation can be disabled through I2C.

Ensure that system power dissipation is under the limit of the device. The power dissipated by the device can be calculated using the following equation:

PDISS = PSYS + PBAT

Where:

PSYS = (VIN – VSYS) * IIN

PBAT = (VSYS – VBAT) * IBAT

The die junction temperature, TJ, can be estimated based on the expected board performance using the following equation:

TJ = TA + θJA * PDISS

θJA is largely driven by board layout. For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics Application Report. Under typical conditions, the time spent in this state is very short.