JAJSE60B November   2017  – September 2019 ISOW7821

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     概略回路図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics—5-V Input, 5-V Output
    10. 7.10 Supply Current Characteristics—5-V Input, 5-V Output
    11. 7.11 Electrical Characteristics—5-V Input, 3.3-V Output
    12. 7.12 Supply Current Characteristics—5-V Input, 3.3-V Output
    13. 7.13 Electrical Characteristics—3.3-V Input, 3.3-V Output
    14. 7.14 Supply Current Characteristics—3.3-V Input, 3.3-V Output
    15. 7.15 Switching Characteristics—5-V Input, 5-V Output
    16. 7.16 Switching Characteristics—5-V Input, 3.3-V Output
    17. 7.17 Switching Characteristics—3.3-V Input, 3.3-V Output
    18. 7.18 Insulation Characteristics Curves
    19. 7.19 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Electromagnetic Compatibility (EMC) Considerations
      2. 9.3.2 Power-Up and Power-Down Behavior
      3. 9.3.3 Current Limit, Thermal Overload Protection
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device I/O Schematics
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
        1. 10.2.3.1 Insulation Lifetime
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 PCB Material
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
      1. 13.1.1 開発サポート
    2. 13.2 ドキュメントのサポート
      1. 13.2.1 関連資料
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 コミュニティ・リソース
    5. 13.5 商標
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10.2.3.1 Insulation Lifetime

Insulation lifetime projection data is collected by using industry-standard Time Dependent Dielectric Breakdown (TDDB) test method. In this test, all pins on each side of the barrier are tied together creating a two-terminal device and high voltage applied between the two sides; See Figure 33 for TDDB test setup. The insulation breakdown data is collected at various high voltages switching at 60 Hz over temperature. For reinforced insulation, VDE standard requires the use of TDDB projection line with failure rate of less than 1 part per million (ppm). Even though the expected minimum insulation lifetime is 20 years at the specified working isolation voltage, VDE reinforced certification requires additional safety margin of 20% for working voltage and 87.5% for lifetime which translates into minimum required insulation lifetime of 37.5 years at a working voltage that's 20% higher than the specified value.  

Figure 34 shows the intrinsic capability of the isolation barrier to withstand high voltage stress over its lifetime. Based on the TDDB data, the intrinsic capability of the insulation is 1000 VRMS with a lifetime of 1184 years.

ISOW7821 hv_tst_lla197.gifFigure 33. Test Setup for Insulation Lifetime Measurement
ISOW7821 sllser1-insulation-lifetime-projection-for-1000-vrms-working-voltage-2.pngFigure 34. Insulation Lifetime Projection Data