SLVSCH2 July   2014 TPS2105-EP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1. 5.1 Function Table
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Switches
        1. 7.3.1.1 N-Channel MOSFET
        2. 7.3.1.2 P-Channel MOSFET
        3. 7.3.1.3 Charge Pump
        4. 7.3.1.4 Driver
        5. 7.3.1.5 Enable
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation With EN Control
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Step-by-Step Design Procedure
        2. 8.2.2.2 Power-Supply Considerations
        3. 8.2.2.3 Switch Transition
        4. 8.2.2.4 Thermal Protection
        5. 8.2.2.5 Undervoltage Lockout
        6. 8.2.2.6 Power Dissipation and Junction Temperature
        7. 8.2.2.7 ESD Protection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Trademarks

All other trademarks are the property of their respective owners.

11.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.