SLVSBP4D December   2012  – September 2014 TPS43060 , TPS43061

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Simplified Schematic
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Characteristics
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Switching Frequency
      2. 8.3.2  Low-Dropout Regulator
      3. 8.3.3  Input Undervoltage (UV)
      4. 8.3.4  Enable and Adjustable UVLO
      5. 8.3.5  Voltage Reference and Setting Output Voltage
      6. 8.3.6  Minimum On-Time and Pulse Skipping
      7. 8.3.7  Zero-Cross Detection and Duty Cycle
      8. 8.3.8  Minimum Off-Time and Maximum Duty Cycle
      9. 8.3.9  Soft-Start
      10. 8.3.10 Power Good
      11. 8.3.11 Overvoltage Protection (OVP)
      12. 8.3.12 OVP and Current Sense Resistor Selection
      13. 8.3.13 Gate Drivers
      14. 8.3.14 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Typical Operation (VIN < VOUT)
      2. 8.4.2 Pass Through (VIN > VOUT)
      3. 8.4.3 Split-Rail Operation
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Synchronous Boost Converter Typical Application Using TPS43061
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1  Selecting the Switching Frequency
          2. 9.2.1.2.2  Inductor Selection
          3. 9.2.1.2.3  Selecting the Current Sense Resistor
          4. 9.2.1.2.4  Output Capacitor Selection
          5. 9.2.1.2.5  MOSFET Selection - NexFET Power Block
          6. 9.2.1.2.6  Bootstrap Capacitor Selection
          7. 9.2.1.2.7  VCC Capacitor
          8. 9.2.1.2.8  Input Capacitor
          9. 9.2.1.2.9  Output Voltage and Feedback Resistors Selection
          10. 9.2.1.2.10 Setting the Soft-Start Time
          11. 9.2.1.2.11 UVLO Set Point
          12. 9.2.1.2.12 Power Good Resistor Selection
          13. 9.2.1.2.13 Control Loop Compensation
          14. 9.2.1.2.14 DCM, Pulse-Skip Mode, and No-Load Input Current
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High-Efficiency 40-V Synchronous Boost Converter Typical Application Using TPS43060
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Related Links
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

12 Device and Documentation Support

12.1 Device Support

12.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

12.2 Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

Table 2. Related Links

PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY
TPS43060 Click here Click here Click here Click here Click here
TPS43061 Click here Click here Click here Click here Click here

12.3 Trademarks

NexFET, PowerPAD are trademarks of Texas Instruments.

WEBENCH is a registered trademark of Texas Instruments.

12.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.5 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.