JAJSF84B December   2008  – May 2018 TPS650250

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     詳細ブロック図
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Dissipation Ratings
    6. 6.6  Electrical Characteristics
    7. 6.7  Electrical Characteristics VDCDC1
    8. 6.8  Electrical Characteristics VDCDC2
    9. 6.9  Electrical Characteristics VDCDC3
    10. 6.10 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Step-Down Converters, VDCDC1, VDCDC2 AND VDCDC3
      2. 7.3.2 Power Save Mode Operation
      3. 7.3.3 Soft Start
      4. 7.3.4 100% Duty Cycle Low Dropout Operation
      5. 7.3.5 Low Dropout Voltage Regulators
      6. 7.3.6 Undervoltage Lockout
      7. 7.3.7 PWRFAIL
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Typical Configuration For The Samsung Processor S3C6400-533MHz
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Inductor Selection for the DCDC Converters
        2. 8.2.3.2 Output Capacitor Selection
        3. 8.2.3.3 Input Capacitor Selection
        4. 8.2.3.4 Output Voltage Selection
        5. 8.2.3.5 Voltage Change on VDCDC3
        6. 8.2.3.6 Vdd_alive Output
        7. 8.2.3.7 LDO1 and LDO2
        8. 8.2.3.8 Vcc-Filter
      4. 8.2.4 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 デベロッパー・ネットワークの製品に関する免責事項
      2. 11.1.2 開発サポート
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Layout Guidelines

  • The VINDCDC1, VINDCDC2 and VINDCDC3 terminals should be bypassed to ground with a low ESR ceramic bypass capacitor. The typical recommended bypass capacitance is 10 uF ceramic with a X5R or X7R dielectric.
  • The VINLDO terminal should be bypassed to ground with a low ESR ceramic bypass capacitor. The typical recommended bypass capacitance is 1 uF ceramic with a X5R or X7R dielectric.
  • The optimum placement is closest to the individual voltage terminals and the AGNDx terminals.
  • The AGNDx terminals should be tied to the pcb ground plane at the terminal of the IC.
  • The cross sectional area loop from the input capacitor to the VINDCDCx input and corresponding PGNDx terminal should be minimized as much as possible.
  • Route the feedback signal for each of the step-down converters next to the current path of the converter in order to decrease the cross sectional area of the feedback loop which minimizes noise injection into the loop.
  • Do not route any noise sensitive signals under or next to any of the step-down inductors. Ensure a keepout region directly under the inductors or at least provide ground shielding.
  • It is recommended to have the layer directly underneath the IC to be a solid copper ground plane.