JAJSH18A March   2019  – September 2019 TPS7A78

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      ハーフブリッジ構成の標準的な回路図
      2.      フルブリッジ構成の標準的な回路図
  4. 改訂履歴
  5. 概要(続き)
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Active Bridge Control
      2. 8.3.2 Full-Bridge (FB) and Half-Bridge (HB) Configurations
      3. 8.3.3 4:1 Switched-Capacitor Voltage Reduction
      4. 8.3.4 Undervoltage Lockout Circuits (VUVLO_SCIN) and (VUVLO_LDO_IN)
      5. 8.3.5 Dropout Voltage Regulation
      6. 8.3.6 Current Limit
      7. 8.3.7 Programmable Power-Fail Detection
      8. 8.3.8 Power-Good (PG) Detection
      9. 8.3.9 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Dropout Mode
      3. 8.4.3 Disabled Mode
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Recommended Capacitor Types
      2. 9.1.2 Input and Output Capacitors Requirements
      3. 9.1.3 Startup Behavior
      4. 9.1.4 Load Transient
      5. 9.1.5 Standby Power and Output Efficiency
      6. 9.1.6 Reverse Current
      7. 9.1.7 Switched-Capacitor Stage Output Impedance
      8. 9.1.8 Power Dissipation (PD)
      9. 9.1.9 Estimating Junction Temperature
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Calculating the Cap-Drop Capacitor CS
          1. 9.2.2.1.1 CS Calculations for the Typical Design
        2. 9.2.2.2 Calculating the Surge Resistor RS
          1. 9.2.2.2.1 RS Calculations for the Typical Design
        3. 9.2.2.3 Checking for the Device Maximum ISHUNT Current
          1. 9.2.2.3.1 ISHUNT Calculations for the Typical Design
        4. 9.2.2.4 Calculating the Bulk Capacitor CSCIN
          1. 9.2.2.4.1 CSCIN Calculations for the Typical Design
        5. 9.2.2.5 Calculating the PFD Pin Resistor Dividers for a Power-Fail Detection
          1. 9.2.2.5.1 PFD Pin Resistor Divider Calculations for the Typical Design
        6. 9.2.2.6 Summary of the Typical Application Design Components
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 開発サポート
        1. 12.1.1.1 評価基板
        2. 12.1.1.2 SIMPLIS モデル
      2. 12.1.2 デバイスの項目表記
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Voltage AC+, AC– (VAC supply mode only) –1.5 30 V
SCIN (VAC supply mode only, internally driven) –1.5 30
SCIN (DC supply mode only, voltage directly applied on SCIN pin) – 0.3 24
LDO_OUT – 0.3 5.5
PF, PG – 0.3 6
PFD –0.3 3
Current LDO_OUT pin reverse current(3) 6 mA
Maximum output Internally limited
IPF, IPG 5
Temperature Storage, TSTG – 65 150
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to the device GND pins (not Earth GND); see the Full Bridge (FB) and Half Bridge (HB) Configurations section for details.
Exceeding the maximum reverse current into the LDO_OUT pin can cause damage to the device; see the  Reverse Current section for details.