SLUSAQ9B December   2011  – December 2015 UC1875-SP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  CLKSYNC
      2. 8.3.2  E/AOUT
      3. 8.3.3  CS+
      4. 8.3.4  FREQSET
      5. 8.3.5  DELSETA-B, DELSETC-D
      6. 8.3.6  EA-
      7. 8.3.7  EA+
      8. 8.3.8  GND
      9. 8.3.9  OUTA - OUTD
      10. 8.3.10 PWRGND
      11. 8.3.11 RAMP
      12. 8.3.12 SLOPE
      13. 8.3.13 SOFTSTART
      14. 8.3.14 VC
      15. 8.3.15 VIN
      16. 8.3.16 VREF
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Undervoltage Lockout Section
      2. 9.1.2 Synchronizing the Oscillator
      3. 9.1.3 Syncing to External TTL/CMOS
      4. 9.1.4 Delay Blocks and Output Stages
      5. 9.1.5 Output Switch Orientation
      6. 9.1.6 Fault/Soft Start
      7. 9.1.7 Slope/Ramp Pins
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Phase-Shifted Fundamentals
        2. 9.2.2.2  Circuit Schematic and Description
        3. 9.2.2.3  Initial Conditions (Time: t = t(0))
        4. 9.2.2.4  Right Leg Resonant Transition Interval (Time: t(0) < t < t(1))
        5. 9.2.2.5  Clamped Freewheeling Interval (Time: t(1) < t < t(2))
        6. 9.2.2.6  Left Leg Transition Interval (Time: t(2) < t < t(3))
        7. 9.2.2.7  Power Transfer Interval (Time: t(3) < t < t(4))
        8. 9.2.2.8  Switch Turn Off (Time: t(4))
        9. 9.2.2.9  Resonant Tank Considerations
        10. 9.2.2.10 Resonant Circuit Limitations
        11. 9.2.2.11 Stored Inductive Energy
        12. 9.2.2.12 Resonant Circuit Summary
        13. 9.2.2.13 Stored Energy Requirements
        14. 9.2.2.14 Minimum Primary Current
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Ground (GND)
      2. 11.1.2 Bias Supply (VCC)
      3. 11.1.3 Feedback Traces
      4. 11.1.4 Compensation Components
      5. 11.1.5 Traces and Ground Planes
      6. 11.1.6 Current Transformer
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

12 Device and Documentation Support

12.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.2 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.