SBAA222A October   2017  – April 2025 ADS1282-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Overview
  5. 2 SEE Mechanisms
  6. 3 Test Device and Evaluation Board
  7. 4 Irradiation Facility and Setup
    1. 4.1 Depth, Range, and LETeff Calculation
  8. 5 Test Setup and Procedures
    1. 5.1 SEE Testing Block Diagram
    2. 5.2 Test Parameters
    3. 5.3 Test Conditions
  9. 6 SET Test Results
  10. 7 SEL Test Results
  11. 8 Conclusions
  12. 9 Acknowledgment
  13. 10References
  14. 11Revision History

10 References

  1. L. Scheick, G. Allen and L. Edmonds, "Single-event effect qualification of 24-bit analog-to-digital converters," in IEEE Radiation Effects Data Workshop, San Francisco, CA, 2013.
  2. ADS1282-SP Radiation Tolerant High-Resolution Delta Sigma ADC (SBAS691).
  3. Texas A&M University, Cyclotron Institute
  4. Standard Guide for the Measurement of Single-Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices, webpage.
  5. JEDEC, Test Procedure for the Management of Single-Event Effects in Semiconductor Devices From Heavy Ion Irradiation, webpage.
  6. Inc, Aeroflex RAD, SEE Test Report for Texas Instruments ADS1282-SP high resolution analog-to-digital converter (ADC), Aeroflex RAD Inc, Colorado Springs, CO, 1025.
  7. M. Shoga and D. Binder, Theory of single event latchup in complementary metal-oxide semiconductor integrated circuits IEEE Trans. Nucl. Sci., vol. 33 , no. 6, pp. 1714--1717, 1986.
  8. G. Bruguier and J. Palau, "Single particle-induced latchup," IEEE Trans. Nucl. Sci, , vol. 43, no. 2, pp. 522-532, 1996.
  9. Texas Instruments, Single Event Effects (SEE) Test Report of the TPS7H3301-SP, radiation report.