SBOA564 December   2022 TRF0206-SP

 

  1.   Single-Event Effects Test Report of the TRF0206-SP 6.5-GHz Differential Amplifier
  2.   Trademarks
  3. 1 Overview
  4. 2 Single-Event Effects
  5. 3 Test Device and Evaluation Board Information
  6. 4 Irradiation Facility and Setup
  7. 5 Depth, Range, and LETEFF Calculation
  8. 6 Test Set-Up and Procedures
  9. 7 Single-Event Latch-up (SEL) Results
  10. 8 Single-Event Transients (SET) Results
  11. 9 Event Rate Calculations
  12. 10Summary
  13.   A Total Ionizing Dose from SEE Experiments
  14.   B Confidence Interval Calculations
  15.   C Orbital Environment Estimations
  16.   D References

2 Single-Event Effects

The primary concern for the TRF0206-SP are its resilience against the destructive single-event effects (DSEE), such as single-event latch-up (SEL) and single-event-burnout (SEB). Since the operating voltage of TRF0206-SP is low, SEB is not a concern.

The TRF0206-SP was characterized for SEL events. In mixed technologies, such as the SiGe-BiCMOS process used for the TRF0206-SP, the presence of the CMOS circuitry introduces a potential SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts) [1][2]. If formed, the parasitic bipolar structure creates a high-conductance path (creating a steady-state current that is orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The TRF0206-SP exhibited no SEL with heavy-ions of up to LETEFF = 82.1 MeV-cm2/mg at fluences in excess of 107 ions/cm2 and a die temperature of 125°C.

Another concern on high reliability and performance applications is the single-events-transient (SET) characteristic of the device. The TRF0206-SP SET performance was characterized up to LETEFF = 74.92 MeV-cm2/mg. The device was characterized for SET at supply voltage of 3.3 V under DC input conditions. Test conditions and results are discussed in Section 8.